YGW75N65T1 Todos los transistores

 

YGW75N65T1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: YGW75N65T1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.2 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 40 nS
   Coesⓘ - Capacitancia de salida, typ: 200 pF
   Qgⓘ - Carga total de la puerta, typ: 260 nC
   Paquete / Cubierta: TO247
 

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YGW75N65T1 Datasheet (PDF)

 ..1. Size:422K  cn luxin semi
ygw75n65t1.pdf pdf_icon

YGW75N65T1

YGW75N65T1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due

 6.1. Size:422K  cn luxin semi
ygw75n65f1.pdf pdf_icon

YGW75N65T1

YGW75N65F1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due

 6.2. Size:411K  cn luxin semi
ygw75n65fp.pdf pdf_icon

YGW75N65T1

YGW75N65FP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due

 6.3. Size:253K  cn luxin semi
ygw75n65hp.pdf pdf_icon

YGW75N65T1

Preliminary YGW75N65HP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.65 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching c

Otros transistores... YGW50N120FP , YGW50N65F1A , YGW50N65T1 , YGW60N65F1A2 , YGW60N65T1 , YGW75N65F1 , YGW75N65FP , YGW75N65HP , JT075N065WED , NCE07T60BI , NCE07TD60BF , NCE07TD60BD , NCE07TD60B , NCE07TD60BI , NCE07TD60BK , NCE10TD60BF , NCE10TD60BD .

History: AIGW50N65F5 | MIG10Q806HA

 

 
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History: AIGW50N65F5 | MIG10Q806HA

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