YGW75N65T1 PDF and Equivalents Search

 

YGW75N65T1 Specs and Replacement

Type Designator: YGW75N65T1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 200 pF

Package: TO247

 YGW75N65T1 Substitution

- IGBT ⓘ Cross-Reference Search

 

YGW75N65T1 datasheet

 ..1. Size:422K  cn luxin semi
 ygw75n65t1.pdf pdf_icon

YGW75N65T1

YGW75N65T1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A C improved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching capability due ... See More ⇒

 6.1. Size:422K  cn luxin semi
 ygw75n65f1.pdf pdf_icon

YGW75N65T1

YGW75N65F1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A C improved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching capability due ... See More ⇒

 6.2. Size:411K  cn luxin semi
 ygw75n65fp.pdf pdf_icon

YGW75N65T1

YGW75N65FP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A C improved reliability V I =75A 1.8 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching capability due ... See More ⇒

 6.3. Size:253K  cn luxin semi
 ygw75n65hp.pdf pdf_icon

YGW75N65T1

Preliminary YGW75N65HP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A C improved reliability V I =75A 1.65 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching c... See More ⇒

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Specs: YGW50N120FP , YGW50N65F1A , YGW50N65T1 , YGW60N65F1A2 , YGW60N65T1 , YGW75N65F1 , YGW75N65FP , YGW75N65HP , IRGP4066D , NCE07T60BI , NCE07TD60BF , NCE07TD60BD , NCE07TD60B , NCE07TD60BI , NCE07TD60BK , NCE10TD60BF , NCE10TD60BD .

History: RJH60F6BDPQ-A0 | STGWA100H65DFB2 | STGW60H65DFB | STGWT40H65DFB | STGWA30IH65DF

Keywords - YGW75N65T1 transistor spec

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