All IGBT. YGW75N65T1 Datasheet

 

YGW75N65T1 Datasheet and Replacement


   Type Designator: YGW75N65T1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qgⓘ - Total Gate Charge, typ: 260 nC
   Package: TO247
      - IGBT Cross-Reference

 

YGW75N65T1 Datasheet (PDF)

 ..1. Size:422K  cn luxin semi
ygw75n65t1.pdf pdf_icon

YGW75N65T1

YGW75N65T1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due

 6.1. Size:422K  cn luxin semi
ygw75n65f1.pdf pdf_icon

YGW75N65T1

YGW75N65F1 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.7 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due

 6.2. Size:411K  cn luxin semi
ygw75n65fp.pdf pdf_icon

YGW75N65T1

YGW75N65FP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due

 6.3. Size:253K  cn luxin semi
ygw75n65hp.pdf pdf_icon

YGW75N65T1

Preliminary YGW75N65HP 650V /75A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 75 A Cimproved reliability V I =75A 1.65 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching c

Datasheet: YGW50N120FP , YGW50N65F1A , YGW50N65T1 , YGW60N65F1A2 , YGW60N65T1 , YGW75N65F1 , YGW75N65FP , YGW75N65HP , CRG60T60AK3HD , NCE07T60BI , NCE07TD60BF , NCE07TD60BD , NCE07TD60B , NCE07TD60BI , NCE07TD60BK , NCE10TD60BF , NCE10TD60BD .

History: YGW60N65T1

Keywords - YGW75N65T1 transistor datasheet

 YGW75N65T1 cross reference
 YGW75N65T1 equivalent finder
 YGW75N65T1 lookup
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 YGW75N65T1 replacement

 

 
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