NCE25TD120BT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE25TD120BT
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 365
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 30
Colector de Corriente Continua a 25℃ |Ic|, A: 50
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.55
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 17
Capacitancia de salida (Cc), typ, pF: 72
Carga total de la puerta (Qg), typ, nC: 146
Paquete / Cubierta: TO247
Búsqueda de reemplazo de NCE25TD120BT - IGBT
NCE25TD120BT Datasheet (PDF)
nce25td120bt.pdf
PbFreeProduct NCE25TD120BT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td120lt.pdf
PbFreeProduct NCE25TD120LT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td135lt.pdf
PbFreeProduct NCE25TD135LT 1350V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25gd135t.pdf
Pb Free ProductNCE25GD135T http://www.ncepower.com NCE25GD135T 1350V, 25A, Trench NPT IGBT Features Trench NPT( Non Punch Through) IGBT High speed switching Low saturation voltage: VCE(sat)=2.0V@IC=25A High input impedance Applications Inductive heating, Microwave oven, Inverter, UPS, etc. Soft switching applications General Description Using advanced Tre
nce25p60k.pdf
NCE25P60Khttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE25P60K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for use as a load switch or in PWMapplications.Schematic diagramGeneral Features V =-60V,I =-50ADS DR
Otros transistores... NCE10TD60B , NCE10TD60BK , NCE15TD120BT , NCE20TD60BD , NCE20TD60B , NCE20TD60BF , NCE20TH60BP , NCE25GD135T , GT30F126 , NCE25TD120LT , NCE25TD135LT , NCE30TD120UT , NCE30TD60B , NCE30TD60BF , NCE30TD60BD , NCE30TD60BP , NCE30TD60BT .
Liste
Recientemente añadidas las descripciónes de los transistores
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