Справочник IGBT. NCE25TD120BT

 

NCE25TD120BT - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NCE25TD120BT
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 365
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 50
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.55
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 17
   Емкость коллектора типовая (Cc), pf: 72
   Общий заряд затвора (Qg), typ, nC: 146
   Тип корпуса: TO247

 Аналог (замена) для NCE25TD120BT

 

 

NCE25TD120BT Datasheet (PDF)

 ..1. Size:357K  ncepower
 nce25td120bt.pdf

NCE25TD120BT NCE25TD120BT

PbFreeProduct NCE25TD120BT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp

 4.1. Size:356K  ncepower
 nce25td120lt.pdf

NCE25TD120BT NCE25TD120BT

PbFreeProduct NCE25TD120LT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp

 6.1. Size:356K  ncepower
 nce25td135lt.pdf

NCE25TD120BT NCE25TD120BT

PbFreeProduct NCE25TD135LT 1350V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp

 9.1. Size:317K  ncepower
 nce25gd135t.pdf

NCE25TD120BT NCE25TD120BT

Pb Free ProductNCE25GD135T http://www.ncepower.com NCE25GD135T 1350V, 25A, Trench NPT IGBT Features Trench NPT( Non Punch Through) IGBT High speed switching Low saturation voltage: VCE(sat)=2.0V@IC=25A High input impedance Applications Inductive heating, Microwave oven, Inverter, UPS, etc. Soft switching applications General Description Using advanced Tre

 9.2. Size:747K  ncepower
 nce25p60k.pdf

NCE25TD120BT NCE25TD120BT

NCE25P60Khttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE25P60K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for use as a load switch or in PWMapplications.Schematic diagramGeneral Features V =-60V,I =-50ADS DR

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