All IGBT. NCE25TD120BT Datasheet

 

NCE25TD120BT IGBT. Datasheet pdf. Equivalent


   Type Designator: NCE25TD120BT
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 365
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 17
   Collector Capacity (Cc), typ, pF: 72
   Total Gate Charge (Qg), typ, nC: 146
   Package: TO247

 NCE25TD120BT Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NCE25TD120BT Datasheet (PDF)

 ..1. Size:357K  ncepower
 nce25td120bt.pdf

NCE25TD120BT NCE25TD120BT

PbFreeProduct NCE25TD120BT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp

 4.1. Size:356K  ncepower
 nce25td120lt.pdf

NCE25TD120BT NCE25TD120BT

PbFreeProduct NCE25TD120LT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp

 6.1. Size:356K  ncepower
 nce25td135lt.pdf

NCE25TD120BT NCE25TD120BT

PbFreeProduct NCE25TD135LT 1350V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp

 9.1. Size:317K  ncepower
 nce25gd135t.pdf

NCE25TD120BT NCE25TD120BT

Pb Free ProductNCE25GD135T http://www.ncepower.com NCE25GD135T 1350V, 25A, Trench NPT IGBT Features Trench NPT( Non Punch Through) IGBT High speed switching Low saturation voltage: VCE(sat)=2.0V@IC=25A High input impedance Applications Inductive heating, Microwave oven, Inverter, UPS, etc. Soft switching applications General Description Using advanced Tre

 9.2. Size:747K  ncepower
 nce25p60k.pdf

NCE25TD120BT NCE25TD120BT

NCE25P60Khttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE25P60K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for use as a load switch or in PWMapplications.Schematic diagramGeneral Features V =-60V,I =-50ADS DR

Datasheet: NCE10TD60B , NCE10TD60BK , NCE15TD120BT , NCE20TD60BD , NCE20TD60B , NCE20TD60BF , NCE20TH60BP , NCE25GD135T , GT30F126 , NCE25TD120LT , NCE25TD135LT , NCE30TD120UT , NCE30TD60B , NCE30TD60BF , NCE30TD60BD , NCE30TD60BP , NCE30TD60BT .

 

 
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