NCE30TD120UT Todos los transistores

 

NCE30TD120UT IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE30TD120UT

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 468 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

trⓘ - Tiempo de subida, typ: 17 nS

Coesⓘ - Capacitancia de salida, typ: 185 pF

Encapsulados: TO247

 Búsqueda de reemplazo de NCE30TD120UT IGBT

- Selección ⓘ de transistores por parámetros

 

NCE30TD120UT datasheet

 ..1. Size:358K  ncepower
nce30td120ut.pdf pdf_icon

NCE30TD120UT

PbFreeProduct NCE30TD120UT 1200V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 7.1. Size:1027K  ncepower
nce30td60bp.pdf pdf_icon

NCE30TD120UT

 7.2. Size:658K  ncepower
nce30td60bd.pdf pdf_icon

NCE30TD120UT

PbFreeProduct NCE30TD60BD 600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed

 7.3. Size:742K  ncepower
nce30td60bp nce30td60bt.pdf pdf_icon

NCE30TD120UT

PbFreeProduct NCE30TD60BP,NCE30TD60BT 600V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H

Otros transistores... NCE20TD60BD , NCE20TD60B , NCE20TD60BF , NCE20TH60BP , NCE25GD135T , NCE25TD120BT , NCE25TD120LT , NCE25TD135LT , GT30G122 , NCE30TD60B , NCE30TD60BF , NCE30TD60BD , NCE30TD60BP , NCE30TD60BT , NCE30TH60BP , NCE40TD120BT , NCE40TD120VT .

History: FF1200R12KE3 | FF1200R17KE3_B2 | NCE30TD60BD | FF1400R17IP4 | IXSH20N60U1

 

 

 

 

↑ Back to Top
.