NCE30TD120UT Даташит. Аналоги. Параметры и характеристики.
Наименование: NCE30TD120UT
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 468 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.95 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 17 nS
Coesⓘ - Выходная емкость, типовая: 185 pF
Qg ⓘ - Общий заряд затвора, typ: 242 nC
Тип корпуса: TO247
Аналог (замена) для NCE30TD120UT
NCE30TD120UT Datasheet (PDF)
nce30td120ut.pdf

PbFreeProduct NCE30TD120UT 1200V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
nce30td60bp.pdf

Pb Free ProductNCE30TD60BP600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce30td60bd.pdf

PbFreeProduct NCE30TD60BD 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed
nce30td60bp nce30td60bt.pdf

PbFreeProduct NCE30TD60BP,NCE30TD60BT 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H
Другие IGBT... NCE20TD60BD , NCE20TD60B , NCE20TD60BF , NCE20TH60BP , NCE25GD135T , NCE25TD120BT , NCE25TD120LT , NCE25TD135LT , IRGB20B60PD1 , NCE30TD60B , NCE30TD60BF , NCE30TD60BD , NCE30TD60BP , NCE30TD60BT , NCE30TH60BP , NCE40TD120BT , NCE40TD120VT .
History: NCE30TD60BF
History: NCE30TD60BF



Список транзисторов
Обновления
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