All IGBT. NCE30TD120UT Datasheet

 

NCE30TD120UT Datasheet and Replacement


   Type Designator: NCE30TD120UT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 468 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 185 pF
   Package: TO247
      - IGBT Cross-Reference

 

NCE30TD120UT Datasheet (PDF)

 ..1. Size:358K  ncepower
nce30td120ut.pdf pdf_icon

NCE30TD120UT

PbFreeProduct NCE30TD120UT 1200V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 7.1. Size:1027K  ncepower
nce30td60bp.pdf pdf_icon

NCE30TD120UT

Pb Free ProductNCE30TD60BP600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 7.2. Size:658K  ncepower
nce30td60bd.pdf pdf_icon

NCE30TD120UT

PbFreeProduct NCE30TD60BD 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed

 7.3. Size:742K  ncepower
nce30td60bp nce30td60bt.pdf pdf_icon

NCE30TD120UT

PbFreeProduct NCE30TD60BP,NCE30TD60BT 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H

Datasheet: NCE20TD60BD , NCE20TD60B , NCE20TD60BF , NCE20TH60BP , NCE25GD135T , NCE25TD120BT , NCE25TD120LT , NCE25TD135LT , IRGB20B60PD1 , NCE30TD60B , NCE30TD60BF , NCE30TD60BD , NCE30TD60BP , NCE30TD60BT , NCE30TH60BP , NCE40TD120BT , NCE40TD120VT .

History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50

Keywords - NCE30TD120UT transistor datasheet

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