10N50F1D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 10N50F1D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75

Tensión colector-emisor (Vce): 500

Voltaje de saturación colector-emisor (Vce sat): 2.5

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 12

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 45

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220

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10N50F1D Datasheet (PDF)

4.1. fdp10n50f fdpf10n50ft.pdf Size:409K _fairchild_semi

January 2009 UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω Features Description • RDS(on) = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge ( Typ. 18nC) DMOS technology. • Low Crss ( Typ. 10pF) This advance technology has

4.2. aotf10n50fd.pdf Size:330K _aosemi

AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 600V@150℃ The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 0.75Ω popular AC-DC applications. By providing low RDS(on), Ciss an

 4.3. cs10n50f a9r.pdf Size:272K _crhj

Silicon N-Channel Power MOSFET R ○ CS10N50F A9R General Description： VDSS 500 V CS10N50F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

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