All IGBT. 10N50F1D Datasheet

 

10N50F1D IGBT. Datasheet pdf. Equivalent

Type Designator: 10N50F1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75

Maximum Collector-Emitter Voltage |Vce|, V: 500

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 12

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 45

Package: TO220

10N50F1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

10N50F1D Datasheet (PDF)

8.1. fdp10n50f fdpf10n50ft.pdf Size:409K _fairchild_semi

10N50F1D
10N50F1D

January 2009UniFETTMFDP10N50F / FDPF10N50FTN-Channel MOSFET 500V, 9A, 0.85Features Description RDS(on) = 0.71 ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC)DMOS technology. Low Crss ( Typ. 10pF)This advance technology has

8.2. aotf10n50fd.pdf Size:330K _aosemi

10N50F1D
10N50F1D

AOTF10N50FD500V, 10A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS600V@150The AOTF10N50FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 8.3. cs10n50f a9r.pdf Size:272K _crhj

10N50F1D
10N50F1D

Silicon N-Channel Power MOSFET R CS10N50F A9R General Description VDSS 500 V CS10N50F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

8.4. aotf10n50fd.pdf Size:251K _inchange_semiconductor

10N50F1D
10N50F1D

isc N-Channel MOSFET Transistor AOTF10N50FDFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Datasheet: 10N40C1D , 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , IKW50N60H3 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

 

 
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