All IGBT. 10N50F1D Datasheet


10N50F1D IGBT. Datasheet pdf. Equivalent

Type Designator: 10N50F1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75W

Maximum Collector-Emitter Voltage |Vce|, V: 500V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 12A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 45

Package: TO220

10N50F1D Transistor Equivalent Substitute - IGBT Cross-Reference Search


10N50F1D Datasheet (PDF)

4.1. fdp10n50f fdpf10n50ft.pdf Size:409K _fairchild_semi


January 2009 UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85? Features Description RDS(on) = 0.71? ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC) DMOS technology. Low Crss ( Typ. 10pF) This advance technology has been especial

4.2. aotf10n50fd.pdf Size:330K _aosemi


AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 600V@150℃ The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 0.75Ω popular AC-DC applications. By providing low RDS(on), Ciss an

 4.3. cs10n50f a9r.pdf Size:272K _crhj


Silicon N-Channel Power MOSFET R ○ CS10N50F A9R General Description: VDSS 500 V CS10N50F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Datasheet: 10N40C1D , 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , IKW50N60H3 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .


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