TGPF15N60FDR PDF Specs and Replacement
Type Designator: TGPF15N60FDR
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 44 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 10 nS
Coesⓘ - Output Capacitance, typ: 65 pF
Package: TO220F
TGPF15N60FDR Substitution
TGPF15N60FDR PDF specs
tgpf15n60fdr.pdf
TGPF15N60FDR Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s 175 Operating Temperature RoHS Compliant JEDEC Qualification Applications Motor Drive, Air Conditioner, Inverter, Solar Devic... See More ⇒
Specs: TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , FGPF4536 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .
History: 1MB08-120 | IRGP4063D1
Keywords - TGPF15N60FDR transistor spec
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History: 1MB08-120 | IRGP4063D1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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