All IGBT. TGPF15N60FDR Datasheet

 

TGPF15N60FDR Datasheet and Replacement


   Type Designator: TGPF15N60FDR
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 44 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 10 nS
   Coesⓘ - Output Capacitance, typ: 65 pF
   Qg ⓘ - Total Gate Charge, typ: 69 nC
   Package: TO220F
 

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TGPF15N60FDR Datasheet (PDF)

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TGPF15N60FDR

TGPF15N60FDRField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s 175 Operating Temperature RoHS Compliant JEDEC QualificationApplicationsMotor Drive, Air Conditioner, Inverter, SolarDevic

Datasheet: TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , RJP30H2A , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

History: OST60N65HMF | BSM50GAL100D

Keywords - TGPF15N60FDR transistor datasheet

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