STGF30M65DF2 Todos los transistores

 

STGF30M65DF2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGF30M65DF2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 38 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 13.4 nS

Coesⓘ - Capacitancia de salida, typ: 143 pF

Encapsulados: TO220F

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STGF30M65DF2 datasheet

 ..1. Size:708K  st
stgf30m65df2.pdf pdf_icon

STGF30M65DF2

STGF30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor

 8.1. Size:657K  st
stgf30nc60s stgp30nc60s stgwf30nc60s.pdf pdf_icon

STGF30M65DF2

STGF30NC60S STGP30NC60S, STGWF30NC60S 30 A, 600 V, fast IGBT Features TAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) 3 3 2 High current capability 2 1 1 TO-220 TO-220FP Application 1 1 1 3 Motor drive 2 1 TO-3PF Description This device utilizes the advanced PowerMESHTM process result

 8.2. Size:1944K  st
stgb30h60df stgf30h60df stgp30h60df stgw30h60df.pdf pdf_icon

STGF30M65DF2

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 3 Safe paralleling 2 1 D PAK Low thermal resistance TO-220FP Short circuit rated TAB Ultrafast soft recovery antiparallel diode Applications 3 3 I

 8.3. Size:1945K  st
stgf30h60df.pdf pdf_icon

STGF30M65DF2

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 3 Safe paralleling 2 1 D PAK Low thermal resistance TO-220FP Short circuit rated TAB Ultrafast soft recovery antiparallel diode Applications 3 3 I

Otros transistores... STGF5H60DF , STGP5H60DF , STGB6NC60HDT4 , STGD4M65DF2 , STGD6M65DF2 , STGD7NC60HT4 , STGF15M65DF2 , STGF20M65DF2 , FGA60N65SMD , STGWA40H65FB , STGP10M65DF2 , STGP20M65DF2 , STGP30M65DF2 , STGW100H65FB2-4 , STGW10M65DF2 , STGWA30H60DFB , STGW30M65DF2 .

 

 

 


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