All IGBT. STGF30M65DF2 Datasheet

 

STGF30M65DF2 Datasheet and Replacement


   Type Designator: STGF30M65DF2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G30M65DF2
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 38 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 13.4 nS
   Coesⓘ - Output Capacitance, typ: 143 pF
   Qg ⓘ - Total Gate Charge, typ: 80 nC
   Package: TO220F
 

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STGF30M65DF2 Datasheet (PDF)

 ..1. Size:708K  st
 stgf30m65df2.pdf pdf_icon

STGF30M65DF2

STGF30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor

 8.1. Size:657K  st
 stgf30nc60s stgp30nc60s stgwf30nc60s.pdf pdf_icon

STGF30M65DF2

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESHTM process result

 8.2. Size:1944K  st
 stgb30h60df stgf30h60df stgp30h60df stgw30h60df.pdf pdf_icon

STGF30M65DF2

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

 8.3. Size:1945K  st
 stgf30h60df.pdf pdf_icon

STGF30M65DF2

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

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Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MMG100S060B6R | 7MBR50VR120-50

Keywords - STGF30M65DF2 transistor datasheet

 STGF30M65DF2 cross reference
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