STGP20M65DF2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGP20M65DF2
Tipo de transistor: IGBT + Diode
Código de marcado: G20M65DF2
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 166
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 40
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.55
Tensión máxima de puerta-umbral |VGE(th)|, V: 7
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 10.8
Capacitancia de salida (Cc), typ, pF: 95
Carga total de la puerta (Qg), typ, nC: 63
Paquete / Cubierta: TO220
Búsqueda de reemplazo de STGP20M65DF2 - IGBT
STGP20M65DF2 Datasheet (PDF)
stgp20m65df2.pdf
STGP20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeatures High short-circuit withstand timeTAB VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution Safer paralleling321 Low thermal resistanceTO-220 Soft and very fast recovery antiparallel diodeC(2, TAB) Applications Motor control UPSG(1)
stgp20nb37lz.pdf
STGP20NB37LZN-CHANNEL CLAMPED 20A TO-220INTERNALLY CLAMPED PowerMESH IGBTPRELIMINARY DATATYPE VCES VCE(sat) ICSTGP20NB37LZ CLAMPED
stgp20nb60k stgw20nb60k.pdf
STGP20NB60KSTGW20NB60KN-CHANNEL 20A - 600V - TO-220/TO-247SHORT CIRCUIT PROOF PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP20NB60K 600 V
stgp20nb60h.pdf
STGP20NB60HN-CHANNEL 20A - 600V TO-220PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP20NB60H 600 V
stgb20nc60v stgp20nc60v stgw20nc60v.pdf
STGB20NC60V, STGP20NC60V, STGW20NC60V30 A - 600 V - very fast IGBTDatasheet - production dataFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability3 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor driversDPAK HF, SMPS and PFC in both hard
stgp20nc60v.pdf
STGB20NC60V - STGP20NC60VSTGW20NC60V30 A - 600 V - very fast IGBTFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility)3 High current capability 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor drivers DPAK HF, SMPS and PFC in both hard switch and resonant topologi
stgp20v60df.pdf
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete
stgp20nb60hd.pdf
STGW20NB60HD N-CHANNEL 20A - 600V - TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW20NB60HD 600 V
stgp20v60f.pdf
STGB20V60F, STGP20V60F600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Very high speed switching seriesTABTAB Tail-less switching off Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A33 Tight parameters distribution211 Safe parallelingD2PAKTO-
stgp20h60df.pdf
STGB20H60DF, STGF20H60DF, STGP20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution3 Safe paralleling32211 Low thermal resistanceTO-220 TO-220FP Short-circuit rated Ultrafast soft recovery antiparallel diodeTABApplications31 Motor contr
Otros transistores... STGD4M65DF2 , STGD6M65DF2 , STGD7NC60HT4 , STGF15M65DF2 , STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB , STGP10M65DF2 , CRG60T60AN3H , STGP30M65DF2 , STGW100H65FB2-4 , STGW10M65DF2 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 .
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