STGP20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeatures High short-circuit withstand timeTAB VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution Safer paralleling321 Low thermal resistanceTO-220 Soft and very fast recovery antiparallel diodeC(2, TAB) Applications Motor control UPSG(1)

STGP20NB37LZN-CHANNEL CLAMPED 20A TO-220INTERNALLY CLAMPED PowerMESH IGBTPRELIMINARY DATATYPE VCES VCE(sat) ICSTGP20NB37LZ CLAMPED

STGP20NB60KSTGW20NB60KN-CHANNEL 20A - 600V - TO-220/TO-247SHORT CIRCUIT PROOF PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP20NB60K 600 V

STGP20NB60HN-CHANNEL 20A - 600V TO-220PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP20NB60H 600 V

STGB20NC60V, STGP20NC60V, STGW20NC60V30 A - 600 V - very fast IGBTDatasheet - production dataFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability3 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor driversDPAK HF, SMPS and PFC in both hard

STGB20NC60V - STGP20NC60VSTGW20NC60V30 A - 600 V - very fast IGBTFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility)3 High current capability 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor drivers DPAK HF, SMPS and PFC in both hard switch and resonant topologi

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete

STGW20NB60HD N-CHANNEL 20A - 600V - TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW20NB60HD 600 V

STGB20V60F, STGP20V60F600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Very high speed switching seriesTABTAB Tail-less switching off Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A33 Tight parameters distribution211 Safe parallelingD2PAKTO-

STGB20H60DF, STGF20H60DF, STGP20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution3 Safe paralleling32211 Low thermal resistanceTO-220 TO-220FP Short-circuit rated Ultrafast soft recovery antiparallel diodeTABApplications31 Motor contr