STGP20M65DF2 IGBT. Datasheet pdf. Equivalent
Type Designator: STGP20M65DF2
Type: IGBT + Anti-Parallel Diode
Marking Code: G20M65DF2
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 166
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 40
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 10.8
Collector Capacity (Cc), typ, pF: 95
Total Gate Charge (Qg), typ, nC: 63
Package: TO220
STGP20M65DF2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
STGP20M65DF2 Datasheet (PDF)
stgp20m65df2.pdf
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STGP20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeatures High short-circuit withstand timeTAB VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution Safer paralleling321 Low thermal resistanceTO-220 Soft and very fast recovery antiparallel diodeC(2, TAB) Applications Motor control UPSG(1)
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STGP20NB37LZN-CHANNEL CLAMPED 20A TO-220INTERNALLY CLAMPED PowerMESH IGBTPRELIMINARY DATATYPE VCES VCE(sat) ICSTGP20NB37LZ CLAMPED
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STGB20NC60V, STGP20NC60V, STGW20NC60V30 A - 600 V - very fast IGBTDatasheet - production dataFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability3 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor driversDPAK HF, SMPS and PFC in both hard
stgp20nc60v.pdf
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STGB20NC60V - STGP20NC60VSTGW20NC60V30 A - 600 V - very fast IGBTFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility)3 High current capability 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor drivers DPAK HF, SMPS and PFC in both hard switch and resonant topologi
stgp20v60df.pdf
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STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete
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stgp20v60f.pdf
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STGB20V60F, STGP20V60F600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Very high speed switching seriesTABTAB Tail-less switching off Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A33 Tight parameters distribution211 Safe parallelingD2PAKTO-
stgp20h60df.pdf
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STGB20H60DF, STGF20H60DF, STGP20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution3 Safe paralleling32211 Low thermal resistanceTO-220 TO-220FP Short-circuit rated Ultrafast soft recovery antiparallel diodeTABApplications31 Motor contr
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
![STGP20M65DF2](https://alltransistors.com/images/us.png)
![STGP20M65DF2](https://alltransistors.com/images/es.png)
![STGP20M65DF2](https://alltransistors.com/images/ru.png)
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