STGW100H65FB2-4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STGW100H65FB2-4DatasheetTrench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Minimized tail current Tight parameter distribution43 Low thermal resistance21 Positive VCE(sat) temperature coefficientTO247-4 Excellent swi

STGF100N30STGP100N30, STGW100N3090 A - 330 V - fast IGBTFeatures Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology 3 32 21 Peak collector current IRP = 330 A @ 1TC = 25 C (see Table 2)TO-220FPTO-247 Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency

STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery