STGW100H65FB2-4 Todos los transistores

 

STGW100H65FB2-4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGW100H65FB2-4
   Tipo de transistor: IGBT + Diode
   Código de marcado: G100H65FB2
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 441 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 145 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 28 nS
   Coesⓘ - Capacitancia de salida, typ: 318 pF
   Qgⓘ - Carga total de la puerta, typ: 288 nC
   Paquete / Cubierta: TO247-4

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STGW100H65FB2-4 Datasheet (PDF)

 0.1. Size:249K  st
stgw100h65fb2-4.pdf

STGW100H65FB2-4
STGW100H65FB2-4

STGW100H65FB2-4DatasheetTrench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Minimized tail current Tight parameter distribution43 Low thermal resistance21 Positive VCE(sat) temperature coefficientTO247-4 Excellent swi

 7.1. Size:693K  st
stgf100n30 stgp100n30 stgw100n30.pdf

STGW100H65FB2-4
STGW100H65FB2-4

STGF100N30STGP100N30, STGW100N3090 A - 330 V - fast IGBTFeatures Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology 3 32 21 Peak collector current IRP = 330 A @ 1TC = 25 C (see Table 2)TO-220FPTO-247 Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency

 8.1. Size:936K  st
stgw10m65df2.pdf

STGW100H65FB2-4
STGW100H65FB2-4

STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery

Otros transistores... STGD7NC60HT4 , STGF15M65DF2 , STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB , STGP10M65DF2 , STGP20M65DF2 , STGP30M65DF2 , FGH60N60SFD , STGW10M65DF2 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , STGWA75M65DF2 .

 

 
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