STGW100H65FB2-4 PDF and Equivalents Search

 

STGW100H65FB2-4 Specs and Replacement

Type Designator: STGW100H65FB2-4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 441 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 145 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 318 pF

Package: TO247-4

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STGW100H65FB2-4 datasheet

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 stgw100h65fb2-4.pdf pdf_icon

STGW100H65FB2-4

STGW100H65FB2-4 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Minimized tail current Tight parameter distribution 4 3 Low thermal resistance 2 1 Positive VCE(sat) temperature coefficient TO247-4 Excellent swi... See More ⇒

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 stgf100n30 stgp100n30 stgw100n30.pdf pdf_icon

STGW100H65FB2-4

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 stgw10m65df2.pdf pdf_icon

STGW100H65FB2-4

STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery... See More ⇒

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Specs: STGD7NC60HT4 , STGF15M65DF2 , STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB , STGP10M65DF2 , STGP20M65DF2 , STGP30M65DF2 , FGH60N60SFD , STGW10M65DF2 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , STGWA75M65DF2 .

History: RCD1565SL1 | ISL9V5045S3S | NGTG15N60S1EG | RJH30H1DPP-M0 | NCE75TD120VTP | DG25X12T2 | ISL9V5045S3

Keywords - STGW100H65FB2-4 transistor spec

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