STGW100H65FB2-4 - аналоги, параметры транзистора

STGW100H65FB2-4 даташит

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STGW100H65FB2-4 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Minimized tail current Tight parameter distribution 4 3 Low thermal resistance 2 1 Positive VCE(sat) temperature coefficient TO247-4 Excellent swi

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STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery

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