STGW10M65DF2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGW10M65DF2
Tipo de transistor: IGBT + Diode
Código de marcado: G10M65DF2
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 115 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 7.4 nS
Coesⓘ - Capacitancia de salida, typ: 63 pF
Qgⓘ - Carga total de la puerta, typ: 28 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de STGW10M65DF2 - IGBT
STGW10M65DF2 Datasheet (PDF)
stgw10m65df2.pdf
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stgw15s120df3.pdf
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stgw19nc60hd.pdf
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stgw19nc60h.pdf
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stgb19nc60hd stgf19nc60hd stgp19nc60hd stgw19nc60hd.pdf
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stgw12nb60h.pdf
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stgw12nb60hd.pdf
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stgw19nc60wd.pdf
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stgw19nc60w.pdf
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stgw15h120df2.pdf
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stgw15h120f2.pdf
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stgw15m120df3.pdf
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