STGW10M65DF2 Todos los transistores

 

STGW10M65DF2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGW10M65DF2
   Tipo de transistor: IGBT + Diode
   Código de marcado: G10M65DF2
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 115 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 7.4 nS
   Coesⓘ - Capacitancia de salida, typ: 63 pF
   Qgⓘ - Carga total de la puerta, typ: 28 nC
   Paquete / Cubierta: TO247

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STGW10M65DF2 Datasheet (PDF)

 ..1. Size:936K  st
stgw10m65df2.pdf

STGW10M65DF2
STGW10M65DF2

STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery

 8.1. Size:249K  st
stgw100h65fb2-4.pdf

STGW10M65DF2
STGW10M65DF2

STGW100H65FB2-4DatasheetTrench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Minimized tail current Tight parameter distribution43 Low thermal resistance21 Positive VCE(sat) temperature coefficientTO247-4 Excellent swi

 8.2. Size:693K  st
stgf100n30 stgp100n30 stgw100n30.pdf

STGW10M65DF2
STGW10M65DF2

STGF100N30STGP100N30, STGW100N3090 A - 330 V - fast IGBTFeatures Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology 3 32 21 Peak collector current IRP = 330 A @ 1TC = 25 C (see Table 2)TO-220FPTO-247 Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency

 9.1. Size:711K  st
stgb19nc60hdt4 stgf19nc60hd stgp19nc60hd stgw19nc60hd.pdf

STGW10M65DF2
STGW10M65DF2

STGB19NC60HDT4, STGF19NC60HD,STGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with ultrafast diodeDatasheet - production dataFeaturesTAB Low on-voltage drop (VCE(sat)) Very soft ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220FPTAB High frequency motor drives SMPS and PFC in both hard switch and resonant topologies32 3

 9.2. Size:736K  st
stgw15s120df3.pdf

STGW10M65DF2
STGW10M65DF2

STGW15S120DF3, STGWA15S120DF3Trench gate field-stop IGBT, S series 1200 V, 15 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling3 Low thermal resistance21 Soft and fast recovery antiparallel diodeTO-247TO-247 long leadsApplicat

 9.3. Size:963K  st
stgw19nc60hd.pdf

STGW10M65DF2
STGW10M65DF2

STGB19NC60HDT4, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-247

 9.4. Size:650K  st
stgw19nc60h.pdf

STGW10M65DF2
STGW10M65DF2

STGB19NC60H, STGP19NC60HSTGW19NC60H19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) High frequency operation321Applications3TO-2472 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220resonant topologies31DPAKDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t

 9.5. Size:718K  st
stgb19nc60hd stgf19nc60hd stgp19nc60hd stgw19nc60hd.pdf

STGW10M65DF2
STGW10M65DF2

STGB19NC60HD, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) Very soft ultra fast recovery anti-parallel diode33211DPAKApplicationsTO-220 High frequency motor controls SMPS and PFC in both hard switch and resonant topologies33221 1DescriptionTO-247TO-220FPThis IGBT utilize

 9.6. Size:391K  st
stgw12nb60h.pdf

STGW10M65DF2
STGW10M65DF2

STGW12NB60HN-CHANNEL 12A - 600V - TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW12NB60H 600 V

 9.7. Size:651K  st
stgb19nc60h stgp19nc60h stgw19nc60h.pdf

STGW10M65DF2
STGW10M65DF2

STGB19NC60H, STGP19NC60HSTGW19NC60H19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) High frequency operation321Applications3TO-2472 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220resonant topologies31DPAKDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t

 9.8. Size:393K  st
stgw12nb60hd.pdf

STGW10M65DF2
STGW10M65DF2

STGW12NB60HDN-CHANNEL 12A - 600V TO-247PowerMESH IGBTPRELIMINARY DATATYPE VCES VCE(sat) ICSTGW12NB60HD 600 V

 9.9. Size:315K  st
stgp19nc60wd stgw19nc60wd.pdf

STGW10M65DF2
STGW10M65DF2

STGW19NC60WDSTGP19NC60WDN-channel 600V - 19A - TO-220 - TO-247Ultra fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType@100C(max)@25CSTGP19NC60WD 600V

 9.10. Size:310K  st
stgw19nc60wd.pdf

STGW10M65DF2
STGW10M65DF2

STGW19NC60WDSTGP19NC60WDN-channel 600V - 19A - TO-220 - TO-247Ultra fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType@100C(max)@25CSTGP19NC60WD 600V

 9.11. Size:1018K  st
stgw15m120df3 stgwa15m120df3.pdf

STGW10M65DF2
STGW10M65DF2

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 9.12. Size:955K  st
stgb19nc60hd stgf19nc60hd stgp19nc60hd stgw19nc60hd stgwa19nc60hd.pdf

STGW10M65DF2
STGW10M65DF2

STGx19NC60HDSTGWA19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode31321DPAKApplicationsTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-220FPTO-247This IGBT utilize

 9.13. Size:428K  st
stgw19nc60w.pdf

STGW10M65DF2
STGW10M65DF2

STGB19NC60WSTGP19NC60W, STGW19NC60W19 A - 600 V - ultra fast IGBTFeatures High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)3132Applications1D2PAK High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and 32resonant topologies 1TO-220DescriptionThis IGBT utilizes the advanc

 9.14. Size:430K  st
stgb19nc60w stgp19nc60w stgw19nc60w.pdf

STGW10M65DF2
STGW10M65DF2

STGB19NC60WSTGP19NC60W, STGW19NC60W19 A - 600 V - ultra fast IGBTFeatures High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)3132Applications1D2PAK High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and 32resonant topologies 1TO-220DescriptionThis IGBT utilizes the advanc

 9.15. Size:827K  st
stgw15h120df2.pdf

STGW10M65DF2
STGW10M65DF2

STGW15H120DF2, STGWA15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247T

 9.16. Size:796K  st
stgw15h120f2.pdf

STGW10M65DF2
STGW10M65DF2

STGW15H120F2, STGWA15H120F2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short-circuit withstand time at 3 32 2 TJ=150 C1 1 Safe parallelingTO-247TO-2

 9.17. Size:1049K  st
stgw15m120df3.pdf

STGW10M65DF2
STGW10M65DF2

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 9.18. Size:594K  st
stgw15h120df2 stgwa15h120df2.pdf

STGW10M65DF2
STGW10M65DF2

STGW15H120DF2, STGWA15H120DF2DatasheetTrench gate field-stop IGBT, H series 1200 V, 15 A high speedFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3 VCE(sat) = 2.1 V @ IC = 15 A23121 5 s minimum short circuit withstand time at TJ = 150 CTO-247 TO-247 long leads Safe paralleling Low the

Otros transistores... STGF15M65DF2 , STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB , STGP10M65DF2 , STGP20M65DF2 , STGP30M65DF2 , STGW100H65FB2-4 , GT30G124 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , STGWA75M65DF2 , STGWA100H65DFB2 .

 

 
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