All IGBT. STGW10M65DF2 Datasheet

 

STGW10M65DF2 Datasheet and Replacement


   Type Designator: STGW10M65DF2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G10M65DF2
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 115 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 7.4 nS
   Coesⓘ - Output Capacitance, typ: 63 pF
   Qgⓘ - Total Gate Charge, typ: 28 nC
   Package: TO247
      - IGBT Cross-Reference

 

STGW10M65DF2 Datasheet (PDF)

 ..1. Size:936K  st
stgw10m65df2.pdf pdf_icon

STGW10M65DF2

STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery

 8.1. Size:249K  st
stgw100h65fb2-4.pdf pdf_icon

STGW10M65DF2

STGW100H65FB2-4DatasheetTrench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Minimized tail current Tight parameter distribution43 Low thermal resistance21 Positive VCE(sat) temperature coefficientTO247-4 Excellent swi

 8.2. Size:693K  st
stgf100n30 stgp100n30 stgw100n30.pdf pdf_icon

STGW10M65DF2

STGF100N30STGP100N30, STGW100N3090 A - 330 V - fast IGBTFeatures Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology 3 32 21 Peak collector current IRP = 330 A @ 1TC = 25 C (see Table 2)TO-220FPTO-247 Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency

 9.1. Size:711K  st
stgb19nc60hdt4 stgf19nc60hd stgp19nc60hd stgw19nc60hd.pdf pdf_icon

STGW10M65DF2

STGB19NC60HDT4, STGF19NC60HD,STGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with ultrafast diodeDatasheet - production dataFeaturesTAB Low on-voltage drop (VCE(sat)) Very soft ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220FPTAB High frequency motor drives SMPS and PFC in both hard switch and resonant topologies32 3

Datasheet: STGF15M65DF2 , STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB , STGP10M65DF2 , STGP20M65DF2 , STGP30M65DF2 , STGW100H65FB2-4 , FGA60N65SMD , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , STGWA75M65DF2 , STGWA100H65DFB2 .

History: AOD7B65M3 | RGTH00TS65

Keywords - STGW10M65DF2 transistor datasheet

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