STGW10M65DF2 IGBT. Datasheet pdf. Equivalent
Type Designator: STGW10M65DF2
Type: IGBT + Anti-Parallel Diode
Marking Code: G10M65DF2
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 115
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 20
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 7.4
Collector Capacity (Cc), typ, pF: 63
Total Gate Charge (Qg), typ, nC: 28
Package: TO247
STGW10M65DF2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
STGW10M65DF2 Datasheet (PDF)
stgw10m65df2.pdf
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stgw100h65fb2-4.pdf
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stgw15s120df3.pdf
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stgw19nc60hd.pdf
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stgw19nc60h.pdf
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stgw12nb60hd.pdf
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stgw19nc60wd.pdf
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stgw19nc60w.pdf
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stgw15h120df2.pdf
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stgw15h120f2.pdf
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stgw15m120df3.pdf
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