STGW10M65DF2 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: STGW10M65DF2
Тип транзистора: IGBT + Diode
Маркировка: G10M65DF2
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 115 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 7.4 nS
Coesⓘ - Выходная емкость, типовая: 63 pF
Qgⓘ - Общий заряд затвора, typ: 28 nC
Тип корпуса: TO247
Аналог (замена) для STGW10M65DF2
STGW10M65DF2 Datasheet (PDF)
stgw10m65df2.pdf
STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery
stgw100h65fb2-4.pdf
STGW100H65FB2-4DatasheetTrench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Minimized tail current Tight parameter distribution43 Low thermal resistance21 Positive VCE(sat) temperature coefficientTO247-4 Excellent swi
stgf100n30 stgp100n30 stgw100n30.pdf
STGF100N30STGP100N30, STGW100N3090 A - 330 V - fast IGBTFeatures Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology 3 32 21 Peak collector current IRP = 330 A @ 1TC = 25 C (see Table 2)TO-220FPTO-247 Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency
stgb19nc60hdt4 stgf19nc60hd stgp19nc60hd stgw19nc60hd.pdf
STGB19NC60HDT4, STGF19NC60HD,STGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with ultrafast diodeDatasheet - production dataFeaturesTAB Low on-voltage drop (VCE(sat)) Very soft ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220FPTAB High frequency motor drives SMPS and PFC in both hard switch and resonant topologies32 3
stgw15s120df3.pdf
STGW15S120DF3, STGWA15S120DF3Trench gate field-stop IGBT, S series 1200 V, 15 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling3 Low thermal resistance21 Soft and fast recovery antiparallel diodeTO-247TO-247 long leadsApplicat
stgw19nc60hd.pdf
STGB19NC60HDT4, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-247
stgw19nc60h.pdf
STGB19NC60H, STGP19NC60HSTGW19NC60H19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) High frequency operation321Applications3TO-2472 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220resonant topologies31DPAKDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t
stgb19nc60hd stgf19nc60hd stgp19nc60hd stgw19nc60hd.pdf
STGB19NC60HD, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) Very soft ultra fast recovery anti-parallel diode33211DPAKApplicationsTO-220 High frequency motor controls SMPS and PFC in both hard switch and resonant topologies33221 1DescriptionTO-247TO-220FPThis IGBT utilize
stgw12nb60h.pdf
STGW12NB60HN-CHANNEL 12A - 600V - TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW12NB60H 600 V
stgb19nc60h stgp19nc60h stgw19nc60h.pdf
STGB19NC60H, STGP19NC60HSTGW19NC60H19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) High frequency operation321Applications3TO-2472 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220resonant topologies31DPAKDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t
stgw12nb60hd.pdf
STGW12NB60HDN-CHANNEL 12A - 600V TO-247PowerMESH IGBTPRELIMINARY DATATYPE VCES VCE(sat) ICSTGW12NB60HD 600 V
stgp19nc60wd stgw19nc60wd.pdf
STGW19NC60WDSTGP19NC60WDN-channel 600V - 19A - TO-220 - TO-247Ultra fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType@100C(max)@25CSTGP19NC60WD 600V
stgw19nc60wd.pdf
STGW19NC60WDSTGP19NC60WDN-channel 600V - 19A - TO-220 - TO-247Ultra fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType@100C(max)@25CSTGP19NC60WD 600V
stgw15m120df3 stgwa15m120df3.pdf
STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgb19nc60hd stgf19nc60hd stgp19nc60hd stgw19nc60hd stgwa19nc60hd.pdf
STGx19NC60HDSTGWA19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode31321DPAKApplicationsTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-220FPTO-247This IGBT utilize
stgw19nc60w.pdf
STGB19NC60WSTGP19NC60W, STGW19NC60W19 A - 600 V - ultra fast IGBTFeatures High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)3132Applications1D2PAK High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and 32resonant topologies 1TO-220DescriptionThis IGBT utilizes the advanc
stgb19nc60w stgp19nc60w stgw19nc60w.pdf
STGB19NC60WSTGP19NC60W, STGW19NC60W19 A - 600 V - ultra fast IGBTFeatures High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)3132Applications1D2PAK High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and 32resonant topologies 1TO-220DescriptionThis IGBT utilizes the advanc
stgw15h120df2.pdf
STGW15H120DF2, STGWA15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247T
stgw15h120f2.pdf
STGW15H120F2, STGWA15H120F2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short-circuit withstand time at 3 32 2 TJ=150 C1 1 Safe parallelingTO-247TO-2
stgw15m120df3.pdf
STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgw15h120df2 stgwa15h120df2.pdf
STGW15H120DF2, STGWA15H120DF2DatasheetTrench gate field-stop IGBT, H series 1200 V, 15 A high speedFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3 VCE(sat) = 2.1 V @ IC = 15 A23121 5 s minimum short circuit withstand time at TJ = 150 CTO-247 TO-247 long leads Safe paralleling Low the
Другие IGBT... STGF15M65DF2 , STGF20M65DF2 , STGF30M65DF2 , STGWA40H65FB , STGP10M65DF2 , STGP20M65DF2 , STGP30M65DF2 , STGW100H65FB2-4 , GT30G124 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , STGWA75M65DF2 , STGWA100H65DFB2 .
Список транзисторов
Обновления
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