STGWA60V60DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWA60V60DF
Tipo de transistor: IGBT + Diode
Código de marcado: G60V60DF
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 280 pF
Qgⓘ - Carga total de la puerta, typ: 334 nC
Paquete / Cubierta: TO247
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STGWA60V60DF Datasheet (PDF)
stgw60v60df stgwa60v60df stgwt60v60df.pdf

STGW60V60DF, STGWA60V60DF STGWT60V60DFTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A332211 Tight parameter distributionTO-247TO-247 long leads Safe parallelingTAB Low thermal resistan
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBDatasheetTrench gate field-stop 650 V, 60 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 ATAB Tight parameter distribution Safe paral
stgwa60nc60wdr.pdf

STGWA60NC60WDR60 A, 600 V, ultrafast IGBTFeatures Very high frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultrafast recovery antiparallel diode32Applications1 WeldingTO-247 long leads Power factor correction SMPS High frequency inverter/converterFigure 1. Internal schematic diagramDescriptionThis
stgwa60h65dfb.pdf

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3322 VCE(sat) = 1.6 V (typ.) @ IC = 60 A11TO-3PTO-247 Tight parameters distribution Safe paralleling
Otros transistores... STGP10M65DF2 , STGP20M65DF2 , STGP30M65DF2 , STGW100H65FB2-4 , STGW10M65DF2 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , RJH3047 , STGW75H65DFB2-4 , STGW75M65DF2 , STGWA75M65DF2 , STGWA100H65DFB2 , STGWA20H65DFB2 , STGWA20HP65FB2 , STGWA20IH65DF , STGWA20M65DF2 .
History: 2MBI200U2A-060 | IXXH60N65B4H1 | IXGH56N60B3D1 | F4-30R06W1E3 | TT025N120EQ | 2MBI300VN-120-50 | VS-GB50TP120N
History: 2MBI200U2A-060 | IXXH60N65B4H1 | IXGH56N60B3D1 | F4-30R06W1E3 | TT025N120EQ | 2MBI300VN-120-50 | VS-GB50TP120N



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