STGWA60V60DF Datasheet and Replacement
Type Designator: STGWA60V60DF
Type: IGBT + Anti-Parallel Diode
Marking Code: G60V60DF
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 280 pF
Qg ⓘ - Total Gate Charge, typ: 334 nC
Package: TO247
STGWA60V60DF substitution
STGWA60V60DF Datasheet (PDF)
stgw60v60df stgwa60v60df stgwt60v60df.pdf

STGW60V60DF, STGWA60V60DF STGWT60V60DFTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A332211 Tight parameter distributionTO-247TO-247 long leads Safe parallelingTAB Low thermal resistan
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBDatasheetTrench gate field-stop 650 V, 60 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 ATAB Tight parameter distribution Safe paral
stgwa60nc60wdr.pdf

STGWA60NC60WDR60 A, 600 V, ultrafast IGBTFeatures Very high frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultrafast recovery antiparallel diode32Applications1 WeldingTO-247 long leads Power factor correction SMPS High frequency inverter/converterFigure 1. Internal schematic diagramDescriptionThis
stgwa60h65dfb.pdf

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3322 VCE(sat) = 1.6 V (typ.) @ IC = 60 A11TO-3PTO-247 Tight parameters distribution Safe paralleling
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: RJH60D7DPQ-E0 | MIXA10W1200TML | NGTB40N120IHRWG | AOK50B60D1
Keywords - STGWA60V60DF transistor datasheet
STGWA60V60DF cross reference
STGWA60V60DF equivalent finder
STGWA60V60DF lookup
STGWA60V60DF substitution
STGWA60V60DF replacement
History: RJH60D7DPQ-E0 | MIXA10W1200TML | NGTB40N120IHRWG | AOK50B60D1



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