All IGBT. STGWA60V60DF Datasheet

 

STGWA60V60DF Datasheet and Replacement


   Type Designator: STGWA60V60DF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G60V60DF
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 280 pF
   Qg ⓘ - Total Gate Charge, typ: 334 nC
   Package: TO247
 

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STGWA60V60DF Datasheet (PDF)

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stgw60v60df stgwa60v60df stgwt60v60df.pdf pdf_icon

STGWA60V60DF

STGW60V60DF, STGWA60V60DF STGWT60V60DFTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A332211 Tight parameter distributionTO-247TO-247 long leads Safe parallelingTAB Low thermal resistan

 7.1. Size:685K  st
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf pdf_icon

STGWA60V60DF

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBDatasheetTrench gate field-stop 650 V, 60 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 ATAB Tight parameter distribution Safe paral

 7.2. Size:779K  st
stgwa60nc60wdr.pdf pdf_icon

STGWA60V60DF

STGWA60NC60WDR60 A, 600 V, ultrafast IGBTFeatures Very high frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultrafast recovery antiparallel diode32Applications1 WeldingTO-247 long leads Power factor correction SMPS High frequency inverter/converterFigure 1. Internal schematic diagramDescriptionThis

 7.3. Size:1574K  st
stgwa60h65dfb.pdf pdf_icon

STGWA60V60DF

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3322 VCE(sat) = 1.6 V (typ.) @ IC = 60 A11TO-3PTO-247 Tight parameters distribution Safe paralleling

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: RJH60D7DPQ-E0 | MIXA10W1200TML | NGTB40N120IHRWG | AOK50B60D1

Keywords - STGWA60V60DF transistor datasheet

 STGWA60V60DF cross reference
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