STGW75M65DF2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGW75M65DF2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 468
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 120
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.65
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 22.4
Capacitancia de salida (Cc), typ, pF: 390
Paquete / Cubierta: TO247
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STGW75M65DF2 Datasheet (PDF)
stgw75m65df2 stgwa75m65df2.pdf
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STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of short-circuit withstand time V = 1.65 V (typ.) @ I = 75 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resi
stgw75h65dfb2-4.pdf
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STGW75H65DFB2-4DatasheetTrench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A Very fast and soft recovery co-packaged diode Minimized tail current43 Tight parameter distribution21 Low thermal resistanceTO247-4 Positive VCE
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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