All IGBT. STGW75M65DF2 Datasheet

 

STGW75M65DF2 Datasheet and Replacement


   Type Designator: STGW75M65DF2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G75M65DF2
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 468 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 22.4 nS
   Coesⓘ - Output Capacitance, typ: 390 pF
   Qg ⓘ - Total Gate Charge, typ: 225 nC
   Package: TO247
 

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STGW75M65DF2 Datasheet (PDF)

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 stgw75m65df2 stgwa75m65df2.pdf pdf_icon

STGW75M65DF2

STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of short-circuit withstand time V = 1.65 V (typ.) @ I = 75 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resi

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 stgw75h65dfb2-4.pdf pdf_icon

STGW75M65DF2

STGW75H65DFB2-4DatasheetTrench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A Very fast and soft recovery co-packaged diode Minimized tail current43 Tight parameter distribution21 Low thermal resistanceTO247-4 Positive VCE

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - STGW75M65DF2 transistor datasheet

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