STGWA75M65DF2 Todos los transistores

 

STGWA75M65DF2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWA75M65DF2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 468 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 22.4 nS

Coesⓘ - Capacitancia de salida, typ: 390 pF

Encapsulados: TO247

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STGWA75M65DF2 datasheet

 ..1. Size:1019K  st
stgw75m65df2 stgwa75m65df2.pdf pdf_icon

STGWA75M65DF2

STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of short-circuit withstand time V = 1.65 V (typ.) @ I = 75 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resi

 7.1. Size:555K  st
stgwa75h65dfb2.pdf pdf_icon

STGWA75M65DF2

STGWA75H65DFB2 Datasheet Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temp

 9.1. Size:526K  st
stgwa40h65dfb.pdf pdf_icon

STGWA75M65DF2

STGWA40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist

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stgwa50hp65fb2.pdf pdf_icon

STGWA75M65DF2

STGWA50HP65FB2 Datasheet Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficien

Otros transistores... STGW100H65FB2-4 , STGW10M65DF2 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , GT30G124 , STGWA100H65DFB2 , STGWA20H65DFB2 , STGWA20HP65FB2 , STGWA20IH65DF , STGWA20M65DF2 , STGWA30IH65DF , STGWA40H65DFB , STGWA40H65DFB2 .

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History: STGB10M65DF2 | STGWA30N120KD | SPT40N120T1BT8TL

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