All IGBT. STGWA75M65DF2 Datasheet

 

STGWA75M65DF2 Datasheet and Replacement


   Type Designator: STGWA75M65DF2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G75M65DF2
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 468 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 22.4 nS
   Coesⓘ - Output Capacitance, typ: 390 pF
   Qgⓘ - Total Gate Charge, typ: 225 nC
   Package: TO247
      - IGBT Cross-Reference

 

STGWA75M65DF2 Datasheet (PDF)

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STGWA75M65DF2

STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of short-circuit withstand time V = 1.65 V (typ.) @ I = 75 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resi

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stgwa75h65dfb2.pdf pdf_icon

STGWA75M65DF2

STGWA75H65DFB2DatasheetTrench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temp

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stgwa40h65dfb.pdf pdf_icon

STGWA75M65DF2

STGWA40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist

 9.2. Size:537K  st
stgwa50hp65fb2.pdf pdf_icon

STGWA75M65DF2

STGWA50HP65FB2DatasheetTrench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficien

Datasheet: STGW100H65FB2-4 , STGW10M65DF2 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , YGW60N65F1A1 , STGWA100H65DFB2 , STGWA20H65DFB2 , STGWA20HP65FB2 , STGWA20IH65DF , STGWA20M65DF2 , STGWA30IH65DF , STGWA40H65DFB , STGWA40H65DFB2 .

Keywords - STGWA75M65DF2 transistor datasheet

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