STGWA75M65DF2 PDF and Equivalents Search

 

STGWA75M65DF2 Specs and Replacement

Type Designator: STGWA75M65DF2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 468 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 22.4 nS

Coesⓘ - Output Capacitance, typ: 390 pF

Package: TO247

 STGWA75M65DF2 Substitution

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STGWA75M65DF2 datasheet

 ..1. Size:1019K  st
stgw75m65df2 stgwa75m65df2.pdf pdf_icon

STGWA75M65DF2

STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of short-circuit withstand time V = 1.65 V (typ.) @ I = 75 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resi... See More ⇒

 7.1. Size:555K  st
stgwa75h65dfb2.pdf pdf_icon

STGWA75M65DF2

STGWA75H65DFB2 Datasheet Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temp... See More ⇒

 9.1. Size:526K  st
stgwa40h65dfb.pdf pdf_icon

STGWA75M65DF2

STGWA40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist... See More ⇒

 9.2. Size:537K  st
stgwa50hp65fb2.pdf pdf_icon

STGWA75M65DF2

STGWA50HP65FB2 Datasheet Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficien... See More ⇒

Specs: STGW100H65FB2-4 , STGW10M65DF2 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , GT30G124 , STGWA100H65DFB2 , STGWA20H65DFB2 , STGWA20HP65FB2 , STGWA20IH65DF , STGWA20M65DF2 , STGWA30IH65DF , STGWA40H65DFB , STGWA40H65DFB2 .

History: TA49047 | NGTB35N65FL2WG

Keywords - STGWA75M65DF2 transistor spec

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