STGWA100H65DFB2 Todos los transistores

 

STGWA100H65DFB2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWA100H65DFB2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 441 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 145 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 21 nS

Coesⓘ - Capacitancia de salida, typ: 318 pF

Encapsulados: TO247

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STGWA100H65DFB2 datasheet

 0.1. Size:315K  st
stgwa100h65dfb2.pdf pdf_icon

STGWA100H65DFB2

STGWA100H65DFB2 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution TO-247 long leads Low thermal resistance

 8.1. Size:517K  st
stgwa19nc60hd.pdf pdf_icon

STGWA100H65DFB2

STGWA19NC60HD 31 A, 600 V, very fast IGBT with Ultrafast diode Features Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode Applications 3 2 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-247 resonant topologies Description This device is an ultrafast IGBT. It utilizes the advanced Power MESH process resultin

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stgwa15h120df2.pdf pdf_icon

STGWA100H65DFB2

STGW15H120DF2, STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247 T

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stgwa15m120df3.pdf pdf_icon

STGWA100H65DFB2

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

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History: VS-GB100NH120N | TGAN30S135FD | SRE100N065FSUD6 | TGAN60N65F2DR | NGTB15N120FL2WG | NGTB15N120IHL | RJP60F5DPK

 

 

 

 

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