STGWA100H65DFB2 Todos los transistores

 

STGWA100H65DFB2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGWA100H65DFB2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 441 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 145 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 21 nS
   Coesⓘ - Capacitancia de salida, typ: 318 pF
   Paquete / Cubierta: TO247
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STGWA100H65DFB2 Datasheet (PDF)

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stgwa100h65dfb2.pdf pdf_icon

STGWA100H65DFB2

STGWA100H65DFB2DatasheetTrench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distributionTO-247 long leads Low thermal resistance

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stgwa19nc60hd.pdf pdf_icon

STGWA100H65DFB2

STGWA19NC60HD31 A, 600 V, very fast IGBT with Ultrafast diodeFeatures Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diodeApplications32 High frequency motor drives1 SMPS and PFC in both hard switch and TO-247resonant topologiesDescriptionThis device is an ultrafast IGBT. It utilizes the advanced Power MESH process resultin

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stgwa15h120df2.pdf pdf_icon

STGWA100H65DFB2

STGW15H120DF2, STGWA15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247T

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stgwa15m120df3.pdf pdf_icon

STGWA100H65DFB2

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

Otros transistores... STGW10M65DF2 , STGWA30H60DFB , STGW30M65DF2 , STGWA30M65DF2 , STGWA60V60DF , STGW75H65DFB2-4 , STGW75M65DF2 , STGWA75M65DF2 , CRG60T60AN3H , STGWA20H65DFB2 , STGWA20HP65FB2 , STGWA20IH65DF , STGWA20M65DF2 , STGWA30IH65DF , STGWA40H65DFB , STGWA40H65DFB2 , STGWA40HP65FB2 .

History: SGT40N60FD2PT | APT65GP60B2G | FGH40T100SMD | STGW15H120DF2 | IXBF50N360 | 2MBI600VE-120-50 | IXBF42N300

 

 
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