Справочник IGBT. STGWA100H65DFB2

 

STGWA100H65DFB2 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: STGWA100H65DFB2
   Тип транзистора: IGBT + Diode
   Маркировка: G100H65DFB2
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 441 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 145 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 21 nS
   Coesⓘ - Выходная емкость, типовая: 318 pF
   Qgⓘ - Общий заряд затвора, typ: 288 nC
   Тип корпуса: TO247

 Аналог (замена) для STGWA100H65DFB2

 

 

STGWA100H65DFB2 Datasheet (PDF)

 0.1. Size:315K  st
stgwa100h65dfb2.pdf

STGWA100H65DFB2
STGWA100H65DFB2

STGWA100H65DFB2DatasheetTrench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distributionTO-247 long leads Low thermal resistance

 8.1. Size:517K  st
stgwa19nc60hd.pdf

STGWA100H65DFB2
STGWA100H65DFB2

STGWA19NC60HD31 A, 600 V, very fast IGBT with Ultrafast diodeFeatures Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diodeApplications32 High frequency motor drives1 SMPS and PFC in both hard switch and TO-247resonant topologiesDescriptionThis device is an ultrafast IGBT. It utilizes the advanced Power MESH process resultin

 8.2. Size:827K  st
stgwa15h120df2.pdf

STGWA100H65DFB2
STGWA100H65DFB2

STGW15H120DF2, STGWA15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247T

 8.3. Size:1049K  st
stgwa15m120df3.pdf

STGWA100H65DFB2
STGWA100H65DFB2

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 8.4. Size:796K  st
stgwa15h120f2.pdf

STGWA100H65DFB2
STGWA100H65DFB2

STGW15H120F2, STGWA15H120F2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short-circuit withstand time at 3 32 2 TJ=150 C1 1 Safe parallelingTO-247TO-2

 8.5. Size:1018K  st
stgw15m120df3 stgwa15m120df3.pdf

STGWA100H65DFB2
STGWA100H65DFB2

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 8.6. Size:955K  st
stgb19nc60hd stgf19nc60hd stgp19nc60hd stgw19nc60hd stgwa19nc60hd.pdf

STGWA100H65DFB2
STGWA100H65DFB2

STGx19NC60HDSTGWA19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode31321DPAKApplicationsTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-220FPTO-247This IGBT utilize

 8.7. Size:736K  st
stgwa15s120df3.pdf

STGWA100H65DFB2
STGWA100H65DFB2

STGW15S120DF3, STGWA15S120DF3Trench gate field-stop IGBT, S series 1200 V, 15 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling3 Low thermal resistance21 Soft and fast recovery antiparallel diodeTO-247TO-247 long leadsApplicat

 8.8. Size:594K  st
stgw15h120df2 stgwa15h120df2.pdf

STGWA100H65DFB2
STGWA100H65DFB2

STGW15H120DF2, STGWA15H120DF2DatasheetTrench gate field-stop IGBT, H series 1200 V, 15 A high speedFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3 VCE(sat) = 2.1 V @ IC = 15 A23121 5 s minimum short circuit withstand time at TJ = 150 CTO-247 TO-247 long leads Safe paralleling Low the

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