All IGBT. STGWA100H65DFB2 Datasheet

 

STGWA100H65DFB2 Datasheet and Replacement


   Type Designator: STGWA100H65DFB2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G100H65DFB2
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 441 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 145 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 21 nS
   Coesⓘ - Output Capacitance, typ: 318 pF
   Qg ⓘ - Total Gate Charge, typ: 288 nC
   Package: TO247
 

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STGWA100H65DFB2 Datasheet (PDF)

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stgwa100h65dfb2.pdf pdf_icon

STGWA100H65DFB2

STGWA100H65DFB2DatasheetTrench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distributionTO-247 long leads Low thermal resistance

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stgwa19nc60hd.pdf pdf_icon

STGWA100H65DFB2

STGWA19NC60HD31 A, 600 V, very fast IGBT with Ultrafast diodeFeatures Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diodeApplications32 High frequency motor drives1 SMPS and PFC in both hard switch and TO-247resonant topologiesDescriptionThis device is an ultrafast IGBT. It utilizes the advanced Power MESH process resultin

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stgwa15h120df2.pdf pdf_icon

STGWA100H65DFB2

STGW15H120DF2, STGWA15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247T

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stgwa15m120df3.pdf pdf_icon

STGWA100H65DFB2

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SII200N06

Keywords - STGWA100H65DFB2 transistor datasheet

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