STGWT30HP65FB Todos los transistores

 

STGWT30HP65FB IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWT30HP65FB

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 260 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

Coesⓘ - Capacitancia de salida, typ: 101 pF

Encapsulados: TO3P

 Búsqueda de reemplazo de STGWT30HP65FB IGBT

- Selección ⓘ de transistores por parámetros

 

STGWT30HP65FB datasheet

 ..1. Size:537K  st
stgwt30hp65fb.pdf pdf_icon

STGWT30HP65FB

STGWT30HP65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT Features TAB Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 2 Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A 1 TO-3P Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient C

 6.1. Size:1635K  st
stgwt30h65fb.pdf pdf_icon

STGWT30HP65FB

STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data TAB Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 2 1 VCE(sat) = 1.55 V (typ.) @ IC = 30 A TO-3PF Tight parameters distribution 1 1 1 Safe paralleling 3 Low t

 6.2. Size:698K  st
stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf pdf_icon

STGWT30HP65FB

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.55 V (typ.) @ IC = 30 A TAB Tight parameter distribution Safe para

 6.3. Size:419K  st
stgwt30h60dfb.pdf pdf_icon

STGWT30HP65FB

STGW30H60DFB, STGWT30H60DFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 30 A 3 3 2 2 Tight parameters distribution 1 1 TO-247 Safe paralleling TO-3P Low thermal resist

Otros transistores... STGWA20M65DF2 , STGWA30IH65DF , STGWA40H65DFB , STGWA40H65DFB2 , STGWA40HP65FB2 , STGWA50HP65FB2 , STGWA50M65DF2 , STGWA75H65DFB2 , GT45F122 , STGYA120M65DF2AG , STGYA75H120DF2 , AFGB30T65SQDN , AFGB40T65SQDN , AFGHL40T65SPD , AFGHL40T65SQ , AFGHL40T65SQD , AFGHL50T65SQ .

History: NGTB30N65IHL2WG | SPT25N135F1AT8TL | TT025N120FQ | SPT40N120T1BT8TL

 

 

 

 

↑ Back to Top
.