STGWT30HP65FB IGBT. Datasheet pdf. Equivalent
Type Designator: STGWT30HP65FB
Type: IGBT + Anti-Parallel Diode
Marking Code: GWT30HP65FB
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 260
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 175
Collector Capacity (Cc), typ, pF: 101
Total Gate Charge (Qg), typ, nC: 149
Package: TO3P
STGWT30HP65FB Transistor Equivalent Substitute - IGBT Cross-Reference Search
STGWT30HP65FB Datasheet (PDF)
stgwt30hp65fb.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
STGWT30HP65FBDatasheetTrench gate field-stop 650 V, 30 A high speed HB series IGBTFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current32 Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A1TO-3P Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficientC
stgwt30h65fb.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
STGFW30H65FB, STGW30H65FB, STGWT30H65FBTrench gate field-stop IGBT, HB series 650 V, 30 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 30 ATO-3PF Tight parameters distribution111 Safe paralleling3 Low t
stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 ATAB Tight parameter distribution Safe para
stgwt30h60dfb.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
STGW30H60DFB, STGWT30H60DFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 30 A3322 Tight parameters distribution11TO-247 Safe parallelingTO-3P Low thermal resist
Datasheet: STGWA20M65DF2 , STGWA30IH65DF , STGWA40H65DFB , STGWA40H65DFB2 , STGWA40HP65FB2 , STGWA50HP65FB2 , STGWA50M65DF2 , STGWA75H65DFB2 , GT45F122 , STGYA120M65DF2AG , STGYA75H120DF2 , AFGB30T65SQDN , AFGB40T65SQDN , AFGHL40T65SPD , AFGHL40T65SQ , AFGHL40T65SQD , AFGHL50T65SQ .
![STGWT30HP65FB](https://alltransistors.com/images/us.png)
![STGWT30HP65FB](https://alltransistors.com/images/es.png)
![STGWT30HP65FB](https://alltransistors.com/images/ru.png)
LIST
Last Update
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ