Справочник IGBT. STGWT30HP65FB

 

STGWT30HP65FB - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: STGWT30HP65FB
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 260 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 101 pF
   Тип корпуса: TO3P

 Аналог (замена) для STGWT30HP65FB

 

 

STGWT30HP65FB Datasheet (PDF)

 ..1. Size:537K  st
stgwt30hp65fb.pdf

STGWT30HP65FB STGWT30HP65FB

STGWT30HP65FBDatasheetTrench gate field-stop 650 V, 30 A high speed HB series IGBTFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current32 Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A1TO-3P Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficientC

 6.1. Size:1635K  st
stgwt30h65fb.pdf

STGWT30HP65FB STGWT30HP65FB

STGFW30H65FB, STGW30H65FB, STGWT30H65FBTrench gate field-stop IGBT, HB series 650 V, 30 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 30 ATO-3PF Tight parameters distribution111 Safe paralleling3 Low t

 6.2. Size:698K  st
stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf

STGWT30HP65FB STGWT30HP65FB

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 ATAB Tight parameter distribution Safe para

 6.3. Size:419K  st
stgwt30h60dfb.pdf

STGWT30HP65FB STGWT30HP65FB

STGW30H60DFB, STGWT30H60DFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 30 A3322 Tight parameters distribution11TO-247 Safe parallelingTO-3P Low thermal resist

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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