AFGY100T65SPD Todos los transistores

 

AFGY100T65SPD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFGY100T65SPD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 660 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.3 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 92 nS
   Coesⓘ - Capacitancia de salida, typ: 302 pF
   Qgⓘ - Carga total de la puerta, typ: 109 nC
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de AFGY100T65SPD IGBT

   - Selección ⓘ de transistores por parámetros

 

AFGY100T65SPD Datasheet (PDF)

 ..1. Size:339K  onsemi
 afgy100t65spd.pdf pdf_icon

AFGY100T65SPD

Field Stop Trench IGBT withSoft Fast Recovery Diode100 A, 650 VAFGY100T65SPDAFGY100T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

 9.1. Size:340K  onsemi
 afgy120t65spd.pdf pdf_icon

AFGY100T65SPD

Field Stop Trench IGBT withSoft Fast Recovery Diode120 A, 650 VAFGY120T65SPDAFGY120T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

 9.2. Size:2590K  onsemi
 afgy160t65spd-b4.pdf pdf_icon

AFGY100T65SPD

Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 160 Awww.onsemi.comAFGY160T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

 9.3. Size:1591K  onsemi
 afgy120t65spd-b4.pdf pdf_icon

AFGY100T65SPD

Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 120 Awww.onsemi.comAFGY120T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped

MOSTRAR MÁS

Otros transistores... AFGHL40T65SQ , AFGHL40T65SQD , AFGHL50T65SQ , AFGHL50T65SQD , AFGHL50T65SQDC , AFGHL75T65SQ , AFGHL75T65SQDC , AFGHL75T65SQDT , CRG75T60AK3HD , AFGY120T65SPD , AFGY120T65SPD-B4 , AFGY160T65SPD-B4 , FGA15N120ANTDTU , FGA180N33AT , FGA25N120ANTDTU , FGA3060ADF , FGA30S120P .

 

 
Back to Top

 


 
.