AFGY100T65SPD - аналоги и описание IGBT

 

AFGY100T65SPD - аналоги, основные параметры, даташиты

Наименование: AFGY100T65SPD

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 660 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃

tr ⓘ - Время нарастания типовое: 92 nS

Coesⓘ - Выходная емкость, типовая: 302 pF

Тип корпуса: TO247

 Аналог (замена) для AFGY100T65SPD

- подбор ⓘ IGBT транзистора по параметрам

 

AFGY100T65SPD даташит

 ..1. Size:339K  onsemi
 afgy100t65spd.pdf pdf_icon

AFGY100T65SPD

Field Stop Trench IGBT with Soft Fast Recovery Diode 100 A, 650 V AFGY100T65SPD AFGY100T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various www.onsemi.com applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance cu

 9.1. Size:340K  onsemi
 afgy120t65spd.pdf pdf_icon

AFGY100T65SPD

Field Stop Trench IGBT with Soft Fast Recovery Diode 120 A, 650 V AFGY120T65SPD AFGY120T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various www.onsemi.com applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance cu

 9.2. Size:2590K  onsemi
 afgy160t65spd-b4.pdf pdf_icon

AFGY100T65SPD

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A www.onsemi.com AFGY160T65SPD-B4 Features AEC-Q101 Qualified and PPAP Capable C Very Low Saturation Voltage VCE(sat) = 1.6 V (Typ.) @ IC = 160 A Maximum Junction Temperature TJ = 175 C Positive Temperature Co-Efficient G Tight Parameter Distribution High Input Imped

 9.3. Size:1591K  onsemi
 afgy120t65spd-b4.pdf pdf_icon

AFGY100T65SPD

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A www.onsemi.com AFGY120T65SPD-B4 Features AEC-Q101 Qualified and PPAP Capable C Very Low Saturation Voltage VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature TJ = 175 C Positive Temperature Co-Efficient G Tight Parameter Distribution High Input Imped

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AFGHL40T65SQ , AFGHL40T65SQD , AFGHL50T65SQ , AFGHL50T65SQD , AFGHL50T65SQDC , AFGHL75T65SQ , AFGHL75T65SQDC , AFGHL75T65SQDT , GT30F133 , AFGY120T65SPD , AFGY120T65SPD-B4 , AFGY160T65SPD-B4 , FGA15N120ANTDTU , FGA180N33AT , FGA25N120ANTDTU , FGA3060ADF , FGA30S120P .

History: MG50Q6ES40

 

 

 

 

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