AFGY100T65SPD PDF and Equivalents Search

 

AFGY100T65SPD Specs and Replacement

Type Designator: AFGY100T65SPD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 660 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 92 nS

Coesⓘ - Output Capacitance, typ: 302 pF

Package: TO247

 AFGY100T65SPD Substitution

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AFGY100T65SPD datasheet

 ..1. Size:339K  onsemi
 afgy100t65spd.pdf pdf_icon

AFGY100T65SPD

Field Stop Trench IGBT with Soft Fast Recovery Diode 100 A, 650 V AFGY100T65SPD AFGY100T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various www.onsemi.com applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance cu... See More ⇒

 9.1. Size:340K  onsemi
 afgy120t65spd.pdf pdf_icon

AFGY100T65SPD

Field Stop Trench IGBT with Soft Fast Recovery Diode 120 A, 650 V AFGY120T65SPD AFGY120T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various www.onsemi.com applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance cu... See More ⇒

 9.2. Size:2590K  onsemi
 afgy160t65spd-b4.pdf pdf_icon

AFGY100T65SPD

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A www.onsemi.com AFGY160T65SPD-B4 Features AEC-Q101 Qualified and PPAP Capable C Very Low Saturation Voltage VCE(sat) = 1.6 V (Typ.) @ IC = 160 A Maximum Junction Temperature TJ = 175 C Positive Temperature Co-Efficient G Tight Parameter Distribution High Input Imped... See More ⇒

 9.3. Size:1591K  onsemi
 afgy120t65spd-b4.pdf pdf_icon

AFGY100T65SPD

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A www.onsemi.com AFGY120T65SPD-B4 Features AEC-Q101 Qualified and PPAP Capable C Very Low Saturation Voltage VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature TJ = 175 C Positive Temperature Co-Efficient G Tight Parameter Distribution High Input Imped... See More ⇒

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Specs: AFGHL40T65SQ, AFGHL40T65SQD, AFGHL50T65SQ, AFGHL50T65SQD, AFGHL50T65SQDC, AFGHL75T65SQ, AFGHL75T65SQDC, AFGHL75T65SQDT, GT30F133, AFGY120T65SPD, AFGY120T65SPD-B4, AFGY160T65SPD-B4, FGA15N120ANTDTU, FGA180N33AT, FGA25N120ANTDTU, FGA3060ADF, FGA30S120P

Keywords - AFGY100T65SPD transistor spec

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