FGA180N33AT Todos los transistores

 

FGA180N33AT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGA180N33AT
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 390 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 330 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 180 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 80 nS
   Coesⓘ - Capacitancia de salida, typ: 305 pF
   Qgⓘ - Carga total de la puerta, typ: 169 nC
   Paquete / Cubierta: TO3P

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FGA180N33AT Datasheet (PDF)

 ..1. Size:681K  onsemi
fga180n33at.pdf

FGA180N33AT
FGA180N33AT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:757K  fairchild semi
fga180n33atd.pdf

FGA180N33AT
FGA180N33AT

April 2008FGA180N33ATDtm330V, 180A PDP Trench IGBTFeatures General Description High Current Capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.03V @ IC = 40Ations where low conduction and switching losses are essential. High input impedance RoHS

Otros transistores... AFGHL75T65SQ , AFGHL75T65SQDC , AFGHL75T65SQDT , AFGY100T65SPD , AFGY120T65SPD , AFGY120T65SPD-B4 , AFGY160T65SPD-B4 , FGA15N120ANTDTU , GT30F125 , FGA25N120ANTDTU , FGA3060ADF , FGA30S120P , FGA30T65SHD , FGA40S65SH , FGA40T65SHD , FGA40T65SHDF , FGA40T65UQDF .

 

 
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