FGA180N33AT IGBT. Datasheet pdf. Equivalent
Type Designator: FGA180N33AT
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 390
Maximum Collector-Emitter Voltage |Vce|, V: 330
Maximum Gate-Emitter Voltage |Vge|, V: 30
Maximum Collector Current |Ic| @25℃, A: 180
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.1
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 80
Collector Capacity (Cc), typ, pF: 305
Total Gate Charge (Qg), typ, nC: 169
Package: TO3P
FGA180N33AT Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGA180N33AT Datasheet (PDF)
fga180n33at.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fga180n33atd.pdf
April 2008FGA180N33ATDtm330V, 180A PDP Trench IGBTFeatures General Description High Current Capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.03V @ IC = 40Ations where low conduction and switching losses are essential. High input impedance RoHS
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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