FGA180N33AT PDF and Equivalents Search

 

FGA180N33AT Specs and Replacement

Type Designator: FGA180N33AT

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 390 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 180 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 305 pF

Package: TO3P

 FGA180N33AT Substitution

- IGBTⓘ Cross-Reference Search

 

FGA180N33AT datasheet

 ..1. Size:681K  onsemi
 fga180n33at.pdf pdf_icon

FGA180N33AT

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:757K  fairchild semi
 fga180n33atd.pdf pdf_icon

FGA180N33AT

April 2008 FGA180N33ATD tm 330V, 180A PDP Trench IGBT Features General Description High Current Capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) =1.03V @ IC = 40A tions where low conduction and switching losses are essential. High input impedance RoHS... See More ⇒

Specs: AFGHL75T65SQ, AFGHL75T65SQDC, AFGHL75T65SQDT, AFGY100T65SPD, AFGY120T65SPD, AFGY120T65SPD-B4, AFGY160T65SPD-B4, FGA15N120ANTDTU, IHW40T60, FGA25N120ANTDTU, FGA3060ADF, FGA30S120P, FGA30T65SHD, FGA40S65SH, FGA40T65SHD, FGA40T65SHDF, FGA40T65UQDF

Keywords - FGA180N33AT transistor spec

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