All IGBT. FGA180N33AT Datasheet

 

FGA180N33AT Datasheet and Replacement


   Type Designator: FGA180N33AT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 390 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 180 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 305 pF
   Package: TO3P
      - IGBT Cross-Reference

 

FGA180N33AT Datasheet (PDF)

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FGA180N33AT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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FGA180N33AT

April 2008FGA180N33ATDtm330V, 180A PDP Trench IGBTFeatures General Description High Current Capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.03V @ IC = 40Ations where low conduction and switching losses are essential. High input impedance RoHS

Datasheet: AFGHL75T65SQ , AFGHL75T65SQDC , AFGHL75T65SQDT , AFGY100T65SPD , AFGY120T65SPD , AFGY120T65SPD-B4 , AFGY160T65SPD-B4 , FGA15N120ANTDTU , GT30G122 , FGA25N120ANTDTU , FGA3060ADF , FGA30S120P , FGA30T65SHD , FGA40S65SH , FGA40T65SHD , FGA40T65SHDF , FGA40T65UQDF .

History: MMG300D120B6UC | AOTF5B65M2

Keywords - FGA180N33AT transistor datasheet

 FGA180N33AT cross reference
 FGA180N33AT equivalent finder
 FGA180N33AT lookup
 FGA180N33AT substitution
 FGA180N33AT replacement

 

 
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