FGB3056-F085 Todos los transistores

 

FGB3056-F085 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGB3056-F085
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 560 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 10 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 29 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 2.2 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 1480 nS
   Qgⓘ - Carga total de la puerta, typ: 15.6 nC
   Paquete / Cubierta: D2PAK
 

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FGB3056-F085 Datasheet (PDF)

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FGB3056-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

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fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf pdf_icon

FGB3056-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.2. Size:864K  onsemi
fgb3040cs.pdf pdf_icon

FGB3056-F085

FGB3040CSEcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBTGeneral Description ApplicationsThe FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuitsing SCIS capability along with a ratiometric emitter current ECU Based Systemssensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is p

 9.3. Size:151K  onsemi
afgb30t65sqdn.pdf pdf_icon

FGB3056-F085

AFGB30T65SQDNIGBT for AutomotiveApplications650 V, 30 A, D2PAKFeatureswww.onsemi.com Maximum Junction Temperature: TJ = 175C High Speed Switching SeriesBVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 QualifiedC 100% of the Parts are Dynamically Tested (Note 1)Typical

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXSK50N60BD1 | MIO2400-17E10 | AIHD15N60R | APT45GP120JDQ2

 

 
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History: IXSK50N60BD1 | MIO2400-17E10 | AIHD15N60R | APT45GP120JDQ2

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