FGB3056-F085 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGB3056-F085
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 560 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 10 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 29 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1 V @25℃
trⓘ - Tiempo de subida, typ: 1480 nS
Encapsulados: D2PAK
Búsqueda de reemplazo de FGB3056-F085 IGBT
- Selección ⓘ de transistores por parámetros
FGB3056-F085 datasheet
fgb3056-f085.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fgb3040cs.pdf
FGB3040CS EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT General Description Applications The FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuits ing SCIS capability along with a ratiometric emitter current ECU Based Systems sensing capability. This sensing is based on a emitter active area ratio of 200 1. The output is p
afgb30t65sqdn.pdf
AFGB30T65SQDN IGBT for Automotive Applications 650 V, 30 A, D2PAK Features www.onsemi.com Maximum Junction Temperature TJ = 175 C High Speed Switching Series BVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A 650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 Qualified C 100% of the Parts are Dynamically Tested (Note 1) Typical
Otros transistores... FGAF40N60SMD , FGAF40S65AQ , FGB20N60SFD-F085 , FGB3040CS , FGI3040G2-F085 , FGB3040G2-F085 , FGD3040G2-F085 , FGP3040G2-F085 , IRG4PC40W , FGB3236-F085 , FGI3236-F085 , FGB3440G2-F085 , FGD3440G2-F085 , FGP3440G2-F085 , FGB40T65SPD-F085 , FGB5N60UNDF , FGB7N60UNDF .
History: SMBL1G400US60 | MG25N2YS1
History: SMBL1G400US60 | MG25N2YS1
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc4793 | d965 | mje15031 | irfp150n | mj15025 | mp1620 | kta1381 | bf494





