FGB3056-F085 - аналоги, основные параметры, даташиты
Наименование: FGB3056-F085
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 200 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 560 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 10 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 29 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1 V @25℃
tr ⓘ - Время нарастания типовое: 1480 nS
Тип корпуса: D2PAK
Аналог (замена) для FGB3056-F085
- подбор ⓘ IGBT транзистора по параметрам
FGB3056-F085 даташит
fgb3056-f085.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fgb3040cs.pdf
FGB3040CS EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT General Description Applications The FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuits ing SCIS capability along with a ratiometric emitter current ECU Based Systems sensing capability. This sensing is based on a emitter active area ratio of 200 1. The output is p
afgb30t65sqdn.pdf
AFGB30T65SQDN IGBT for Automotive Applications 650 V, 30 A, D2PAK Features www.onsemi.com Maximum Junction Temperature TJ = 175 C High Speed Switching Series BVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A 650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 Qualified C 100% of the Parts are Dynamically Tested (Note 1) Typical
Другие IGBT... FGAF40N60SMD , FGAF40S65AQ , FGB20N60SFD-F085 , FGB3040CS , FGI3040G2-F085 , FGB3040G2-F085 , FGD3040G2-F085 , FGP3040G2-F085 , IRG4PC40W , FGB3236-F085 , FGI3236-F085 , FGB3440G2-F085 , FGD3440G2-F085 , FGP3440G2-F085 , FGB40T65SPD-F085 , FGB5N60UNDF , FGB7N60UNDF .
History: SKM300GAL123D | SKM400GA062D
History: SKM300GAL123D | SKM400GA062D
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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