FGB3056-F085 - аналоги и описание IGBT

 

FGB3056-F085 - аналоги, основные параметры, даташиты

Наименование: FGB3056-F085

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 200 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 560 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 10 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 29 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1 V @25℃

tr ⓘ - Время нарастания типовое: 1480 nS

Тип корпуса: D2PAK

 Аналог (замена) для FGB3056-F085

- подбор ⓘ IGBT транзистора по параметрам

 

FGB3056-F085 даташит

 ..1. Size:2955K  onsemi
fgb3056-f085.pdfpdf_icon

FGB3056-F085

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.1. Size:1340K  onsemi
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdfpdf_icon

FGB3056-F085

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.2. Size:864K  onsemi
fgb3040cs.pdfpdf_icon

FGB3056-F085

FGB3040CS EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT General Description Applications The FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuits ing SCIS capability along with a ratiometric emitter current ECU Based Systems sensing capability. This sensing is based on a emitter active area ratio of 200 1. The output is p

 9.3. Size:151K  onsemi
afgb30t65sqdn.pdfpdf_icon

FGB3056-F085

AFGB30T65SQDN IGBT for Automotive Applications 650 V, 30 A, D2PAK Features www.onsemi.com Maximum Junction Temperature TJ = 175 C High Speed Switching Series BVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A 650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 Qualified C 100% of the Parts are Dynamically Tested (Note 1) Typical

Другие IGBT... FGAF40N60SMD , FGAF40S65AQ , FGB20N60SFD-F085 , FGB3040CS , FGI3040G2-F085 , FGB3040G2-F085 , FGD3040G2-F085 , FGP3040G2-F085 , IRG4PC40W , FGB3236-F085 , FGI3236-F085 , FGB3440G2-F085 , FGD3440G2-F085 , FGP3440G2-F085 , FGB40T65SPD-F085 , FGB5N60UNDF , FGB7N60UNDF .

History: SKM300GAL123D | SKM400GA062D

 

 

 

 

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