Справочник IGBT. FGB3056-F085

 

FGB3056-F085 Даташит. Аналоги. Параметры и характеристики.


   Наименование: FGB3056-F085
   Тип транзистора: IGBT + Built-in Zener Diodes
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 560 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 10 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 29 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 2.2 V
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 1480 nS
   Qg ⓘ - Общий заряд затвора, typ: 15.6 nC
   Тип корпуса: D2PAK
 

 Аналог (замена) для FGB3056-F085

   - подбор ⓘ IGBT транзистора по параметрам

 

FGB3056-F085 Datasheet (PDF)

 ..1. Size:2955K  onsemi
fgb3056-f085.pdfpdf_icon

FGB3056-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.1. Size:1340K  onsemi
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdfpdf_icon

FGB3056-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.2. Size:864K  onsemi
fgb3040cs.pdfpdf_icon

FGB3056-F085

FGB3040CSEcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBTGeneral Description ApplicationsThe FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuitsing SCIS capability along with a ratiometric emitter current ECU Based Systemssensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is p

 9.3. Size:151K  onsemi
afgb30t65sqdn.pdfpdf_icon

FGB3056-F085

AFGB30T65SQDNIGBT for AutomotiveApplications650 V, 30 A, D2PAKFeatureswww.onsemi.com Maximum Junction Temperature: TJ = 175C High Speed Switching SeriesBVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 QualifiedC 100% of the Parts are Dynamically Tested (Note 1)Typical

Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: TT075U065FBC | NTE3310

 

 
Back to Top

 


 
.