FGB3056-F085 Даташит. Аналоги. Параметры и характеристики.
Наименование: FGB3056-F085
Тип транзистора: IGBT + Built-in Zener Diodes
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 200 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 560 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 10 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 29 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 2.2 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 1480 nS
Qg ⓘ - Общий заряд затвора, typ: 15.6 nC
Тип корпуса: D2PAK
Аналог (замена) для FGB3056-F085
FGB3056-F085 Datasheet (PDF)
fgb3056-f085.pdf

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
fgb3040cs.pdf

FGB3040CSEcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBTGeneral Description ApplicationsThe FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuitsing SCIS capability along with a ratiometric emitter current ECU Based Systemssensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is p
afgb30t65sqdn.pdf

AFGB30T65SQDNIGBT for AutomotiveApplications650 V, 30 A, D2PAKFeatureswww.onsemi.com Maximum Junction Temperature: TJ = 175C High Speed Switching SeriesBVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 QualifiedC 100% of the Parts are Dynamically Tested (Note 1)Typical
Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: TT075U065FBC | NTE3310
History: TT075U065FBC | NTE3310



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