All IGBT. FGB3056-F085 Datasheet

 

FGB3056-F085 IGBT. Datasheet pdf. Equivalent


   Type Designator: FGB3056-F085
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 560 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V
   |Ic|ⓘ - Maximum Collector Current: 29 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 2.2 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 1480 nS
   Qgⓘ - Total Gate Charge, typ: 15.6 nC
   Package: D2PAK

 FGB3056-F085 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGB3056-F085 Datasheet (PDF)

 ..1. Size:2955K  onsemi
fgb3056-f085.pdf

FGB3056-F085
FGB3056-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.1. Size:1340K  onsemi
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf

FGB3056-F085
FGB3056-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.2. Size:864K  onsemi
fgb3040cs.pdf

FGB3056-F085
FGB3056-F085

FGB3040CSEcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBTGeneral Description ApplicationsThe FGB3040CS is an lgnition IGBT that offers outstand- Smart Automotive lgnition Coil Driver Circuitsing SCIS capability along with a ratiometric emitter current ECU Based Systemssensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is p

 9.3. Size:151K  onsemi
afgb30t65sqdn.pdf

FGB3056-F085
FGB3056-F085

AFGB30T65SQDNIGBT for AutomotiveApplications650 V, 30 A, D2PAKFeatureswww.onsemi.com Maximum Junction Temperature: TJ = 175C High Speed Switching SeriesBVCES VCE(sat) TYP IC MAX VCE(sat) = 1.6 V (typ.) @ IC = 30 A650 V 1.6 V 120 A Low VF Soft Recovery Co-packaged Diode AEC-Q101 QualifiedC 100% of the Parts are Dynamically Tested (Note 1)Typical

 9.4. Size:961K  onsemi
fgd3040g2-f085c fgb3040g2-f085c.pdf

FGB3056-F085
FGB3056-F085

FGD3040G2-F085CFGB3040G2-F085CEcoSPARK) 2 Ignition IGBT300 mJ, 400 V, N-Channel Ignition IGBTFeatureswww.onsemi.com SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drive AEC-Q101 Qualified and PPAP CapableCOLLECTOR These Devices are Pb-Free and are RoHS CompliantApplicationsR1GATE Automotive Ignition Coil Driver CircuitsR2 High Current Ignit

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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