FGD5T120SH IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGD5T120SH
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 69 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.9 V @25℃
trⓘ - Tiempo de subida, typ: 20.8 nS
Coesⓘ - Capacitancia de salida, typ: 11 pF
Encapsulados: DPAK
Búsqueda de reemplazo de FGD5T120SH IGBT
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FGD5T120SH datasheet
fgd5t120sh.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FGD3050G2V , FGD3245G2-F085 , FGB3245G2-F085 , FGD3245G2-F085C , FGD3245G2-F085V , FGD3325G2-F085 , FGD3440G2-F085V , FGD3N60UNDF , GT30J127 , FGH12040WD , FGH15T120SMD , FGH20N60SFDTU , FGH20N60SFDTU-F085 , FGH30S150P , FGH40N60SFDTU , FGH40N60SFDTU-F085 , FGH40N60SMD-F085 .
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