All IGBT. FGD5T120SH Datasheet

 

FGD5T120SH Datasheet and Replacement


   Type Designator: FGD5T120SH
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 69 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20.8 nS
   Coesⓘ - Output Capacitance, typ: 11 pF
   Qgⓘ - Total Gate Charge, typ: 6.7 nC
   Package: DPAK
      - IGBT Cross-Reference

 

FGD5T120SH Datasheet (PDF)

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FGD5T120SH

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IXGP16N60C2 | HGTG20N120E2

Keywords - FGD5T120SH transistor datasheet

 FGD5T120SH cross reference
 FGD5T120SH equivalent finder
 FGD5T120SH lookup
 FGD5T120SH substitution
 FGD5T120SH replacement

 

 
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