FGH40T65SHD-F155 Todos los transistores

 

FGH40T65SHD-F155 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGH40T65SHD-F155

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 268 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 34.4 nS

Coesⓘ - Capacitancia de salida, typ: 70 pF

Encapsulados: TO247

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FGH40T65SHD-F155 datasheet

 0.1. Size:1508K  onsemi
 fgh40t65shd-f155.pdf pdf_icon

FGH40T65SHD-F155

 3.1. Size:498K  1
 fgh40t65shdf.pdf pdf_icon

FGH40T65SHD-F155

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer superior conduction www.onsemi.com and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as C induction heating and MWO. Features

 3.2. Size:900K  onsemi
 fgh40t65shdf.pdf pdf_icon

FGH40T65SHD-F155

FGH40T65SHDF 650 V 40 A IGBT TJ =175 C IGBT IGBT

MOSTRAR MÁS

Otros transistores... FGH40N65UFDTU , FGH40N65UFDTU-F085 , FGH40T100SMD , FGH40T120SMD-F155 , FGH40T120SMDL4 , FGH40T120SQDNL4 , FGH40T65SH , FGH40T65SHDF , IRG7IC28U , FGH40T65SPD-F085 , FGH40T65SQD , FGH40T65UPD , FGH40T65UQDF , FGH40T70SHD , FGH50T65UPD , FGH60N60SFDTU-F085 , FGH60N60UFDTU-F085 .

 

 

 


 
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