FGH40T65SHD-F155 Todos los transistores

 

FGH40T65SHD-F155 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGH40T65SHD-F155
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 268 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 34.4 nS
   Coesⓘ - Capacitancia de salida, typ: 70 pF
   Paquete / Cubierta: TO247
 

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FGH40T65SHD-F155 PDF specs

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FGH40T65SHD-F155

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FGH40T65SHD-F155

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer superior conduction www.onsemi.com and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as C induction heating and MWO. Features ... See More ⇒

 3.2. Size:900K  onsemi
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FGH40T65SHD-F155

FGH40T65SHDF 650 V 40 A IGBT TJ =175 C IGBT IGBT ... See More ⇒

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Otros transistores... FGH40N65UFDTU , FGH40N65UFDTU-F085 , FGH40T100SMD , FGH40T120SMD-F155 , FGH40T120SMDL4 , FGH40T120SQDNL4 , FGH40T65SH , FGH40T65SHDF , IRG7IC28U , FGH40T65SPD-F085 , FGH40T65SQD , FGH40T65UPD , FGH40T65UQDF , FGH40T70SHD , FGH50T65UPD , FGH60N60SFDTU-F085 , FGH60N60UFDTU-F085 .

 

 
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