FGH40T65SHD-F155 Datasheet and Replacement
Type Designator: FGH40T65SHD-F155
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 268 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 34.4 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Package: TO247
- IGBT Cross-Reference
FGH40T65SHD-F155 Datasheet (PDF)
fgh40t65shdf.pdf
IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer superior conductionwww.onsemi.comand switching performance and easy parallel operation. This deviceis well suited for the resonant or soft switching application such asCinduction heating and MWO.Features
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MG25Q6ES51 | 7MBR75U2B060
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History: MG25Q6ES51 | 7MBR75U2B060
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