FGH40T65SHD-F155 IGBT. Datasheet pdf. Equivalent
Type Designator: FGH40T65SHD-F155
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 268
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 34.4
Collector Capacity (Cc), typ, pF: 70
Total Gate Charge (Qg), typ, nC: 72.2
Package: TO247
FGH40T65SHD-F155 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGH40T65SHD-F155 Datasheet (PDF)
fgh40t65shdf.pdf
May 2014FGH40T65SHDF650 V, 40 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new series offield stop 3rd generation IGBTs offer superior conduction and Positive Temperaure Co-efficient for Easy Parallel Operatingswitching performance and easy parallel operation. This device
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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