FGH40T65SPD-F085 Todos los transistores

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SPD-F085 Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD-F085 offers the optimum performance with both low www.onsemi.com conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. V

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer superior conduction www.onsemi.com and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as C induction heating and MWO. Features

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 40 A Max Junction Te

FGH40T65SHDF 650 V 40 A IGBT TJ =175 C IGBT IGBT

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SH Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applica-tions where low conduction and switching losses are C essential. Features Maximum Junction Temperature TJ