FGH40T65SPD-F085 Даташит. Аналоги. Параметры и характеристики.
Наименование: FGH40T65SPD-F085
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 267 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 42 nS
Coesⓘ - Выходная емкость, типовая: 91 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
FGH40T65SPD-F085 Datasheet (PDF)
fgh40t65spd-f085.pdf

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SPD-F085DescriptionUsing the novel field stop 3rd generation IGBT technology,FGH40T65SPD-F085 offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operationin various applications, which provides 50 V higher blocking voltageand rugged high current switching reliability.V
fgh40t65shdf.pdf

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer superior conductionwww.onsemi.comand switching performance and easy parallel operation. This deviceis well suited for the resonant or soft switching application such asCinduction heating and MWO.Features
fgh40t65sqd.pdf

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 40 A Max Junction Te
Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: FGB7N60UNDF | CM300DY-24H | MMIX1X200N60B3 | APT35GN120B | STGW40N120KD | RGT8BM65D | OST50N65HF-D
History: FGB7N60UNDF | CM300DY-24H | MMIX1X200N60B3 | APT35GN120B | STGW40N120KD | RGT8BM65D | OST50N65HF-D



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
d882 datasheet | tip29 transistor | s9014 transistor datasheet | 2sa1491 | 2sc1313 datasheet | 2sc984 | 2sa872 | 2sc1222