All IGBT. FGH40T65SPD-F085 Datasheet

 

FGH40T65SPD-F085 IGBT. Datasheet pdf. Equivalent


   Type Designator: FGH40T65SPD-F085
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 267 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 42 nS
   Coesⓘ - Output Capacitance, typ: 91 pF
   Qgⓘ - Total Gate Charge, typ: 36 nC
   Package: TO247

 FGH40T65SPD-F085 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH40T65SPD-F085 Datasheet (PDF)

 0.1. Size:3131K  onsemi
fgh40t65spd-f085.pdf

FGH40T65SPD-F085
FGH40T65SPD-F085

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SPD-F085DescriptionUsing the novel field stop 3rd generation IGBT technology,FGH40T65SPD-F085 offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operationin various applications, which provides 50 V higher blocking voltageand rugged high current switching reliability.V

 5.1. Size:498K  1
fgh40t65shdf.pdf

FGH40T65SPD-F085
FGH40T65SPD-F085

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer superior conductionwww.onsemi.comand switching performance and easy parallel operation. This deviceis well suited for the resonant or soft switching application such asCinduction heating and MWO.Features

 5.2. Size:662K  onsemi
fgh40t65sqd.pdf

FGH40T65SPD-F085
FGH40T65SPD-F085

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 40 A Max Junction Te

 5.3. Size:1508K  onsemi
fgh40t65shd-f155.pdf

FGH40T65SPD-F085
FGH40T65SPD-F085

 5.4. Size:900K  onsemi
fgh40t65shdf.pdf

FGH40T65SPD-F085
FGH40T65SPD-F085

FGH40T65SHDF650 V 40 A IGBT TJ =175C IGBT IGBT

 5.5. Size:475K  onsemi
fgh40t65sh.pdf

FGH40T65SPD-F085
FGH40T65SPD-F085

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplica-tions where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ

Datasheet: FGH40N65UFDTU-F085 , FGH40T100SMD , FGH40T120SMD-F155 , FGH40T120SMDL4 , FGH40T120SQDNL4 , FGH40T65SH , FGH40T65SHDF , FGH40T65SHD-F155 , MBQ50T65FDSC , FGH40T65SQD , FGH40T65UPD , FGH40T65UQDF , FGH40T70SHD , FGH50T65UPD , FGH60N60SFDTU-F085 , FGH60N60UFDTU-F085 , FGH60T65SHD .

 

 
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