FGH40T65UPD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH40T65UPD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 268 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
trⓘ - Tiempo de subida, typ: 26 nS
Coesⓘ - Capacitancia de salida, typ: 82 pF
Encapsulados: TO247
Búsqueda de reemplazo de FGH40T65UPD IGBT
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FGH40T65UPD datasheet
fgh40t65upd.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UPD Description Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field-stop trench IGBTs offer www.onsemi.com optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are C essential. Features Maximum Junction Temperature TJ = 175
fgh40t65uqdf.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UQDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer superior conduction and www.onsemi.com switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction VCES IC heating and MWO. 650
fgh40t65shdf.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer superior conduction www.onsemi.com and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as C induction heating and MWO. Features
fgh40t65sqd.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SQD Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 4th generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. VCES IC Features 650 V 40 A Max Junction Te
Otros transistores... FGH40T120SMD-F155 , FGH40T120SMDL4 , FGH40T120SQDNL4 , FGH40T65SH , FGH40T65SHDF , FGH40T65SHD-F155 , FGH40T65SPD-F085 , FGH40T65SQD , MBQ50T65FDSC , FGH40T65UQDF , FGH40T70SHD , FGH50T65UPD , FGH60N60SFDTU-F085 , FGH60N60UFDTU-F085 , FGH60T65SHD , FGH60T65SQD-F155 , FGH75T65SHD .
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