All IGBT. FGH40T65UPD Datasheet

 

FGH40T65UPD Datasheet and Replacement


   Type Designator: FGH40T65UPD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 268 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 82 pF
   Qgⓘ - Total Gate Charge, typ: 177 nC
   Package: TO247
      - IGBT Cross-Reference

 

FGH40T65UPD Datasheet (PDF)

 ..1. Size:450K  onsemi
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FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65UPDDescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field-stop trench IGBTs offerwww.onsemi.comoptimum performance for solar inverter, UPS, welder, and digitalpower generator where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ = 175

 5.1. Size:753K  onsemi
fgh40t65uqdf.pdf pdf_icon

FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65UQDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer superior conduction andwww.onsemi.comswitching performance and easy parallel operation. This device is wellsuited for the resonant or soft switching application such as inductionVCES ICheating and MWO.650

 6.1. Size:498K  1
fgh40t65shdf.pdf pdf_icon

FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer superior conductionwww.onsemi.comand switching performance and easy parallel operation. This deviceis well suited for the resonant or soft switching application such asCinduction heating and MWO.Features

 6.2. Size:662K  onsemi
fgh40t65sqd.pdf pdf_icon

FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 40 A Max Junction Te

Datasheet: FGH40T120SMD-F155 , FGH40T120SMDL4 , FGH40T120SQDNL4 , FGH40T65SH , FGH40T65SHDF , FGH40T65SHD-F155 , FGH40T65SPD-F085 , FGH40T65SQD , GT45F122 , FGH40T65UQDF , FGH40T70SHD , FGH50T65UPD , FGH60N60SFDTU-F085 , FGH60N60UFDTU-F085 , FGH60T65SHD , FGH60T65SQD-F155 , FGH75T65SHD .

History: AOTF5B65M2

Keywords - FGH40T65UPD transistor datasheet

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